NESG220033 Renesas Electronics Corporation., NESG220033 Datasheet - Page 5

• Manufacturer Part Number: NESG220033
• Description: Npn Silicon Germanium Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

Remark The graphs indicate nominal characteristics.
35
30
25
20
15
10
35
30
25
20
15
10
20
15
10
5
0
0.1
5
0
0.1
5
0
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
1
V
f = 1 GHz
CE
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
= 3 V,
|S
|S
21e
21e
Collector Current I
|
|
2
2
Frequency f (GHz)
Frequency f (GHz)
MSG
MSG
MSG
10
1
1
|S
21e
MAG
MAG
MAG
MAG
|
2
C
(mA)
MAG
V
I
V
I
C
MSG
MSG
C
CE
CE
= 10 mA
= 10 mA
Data Sheet PU10766EJ03V0DS
= 3 V,
= 5 V,
100
10
10
25
20
10
25
20
15
10
20
15
10
35
30
15
35
30
5
0
0.1
5
0
0.1
vs. COLLECTOR CURRENT
5
0
INSERTION POWER GAIN, MAG, MSG
1
V
f = 1 GHz
CE
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
= 5 V,
|S
|S
21e
21e
Collector Current I
|
|
MSG
MSG
2
2
Frequency f (GHz)
Frequency f (GHz)
MSG
10
MAG
1
1
|S
MAG
MAG
21e
NESG220033
MAG
|
2
C
(mA)
MSG
MAG
V
I
V
I
C
C
CE
CE
= 40 mA
= 40 mA
MSG
= 3 V,
= 5 V,
100
10
10
5