NESG220033 Renesas Electronics Corporation., NESG220033 Datasheet - Page 6

• Manufacturer Part Number: NESG220033
• Description: Npn Silicon Germanium Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

S-PARAMETERS
6
of the parameters to microwave circuit simulators without the need for keyboard inputs.
Remark The graphs indicate nominal characteristics.
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.necel.com/microwave/en/
OUTPUT POWER, LINEAR GAIN,
COLLECTOR CURRENT vs. INPUT POWER
–10
30
20
10
–20
1
4
3
2
0
0
1
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
V
I
f = 1 GHz
V
f = 1 GHz,
Z
C (set)
CE
S
CE
= Z
= 5 V,
= 5 V,
= 40 mA,
Sopt
–10
, Z
Collector Current I
Input Power P
L
= 50 Ω
G
L
I
C
10
0
NF
P
in
out
(dBm)
C
(mA)
G
a
10
Data Sheet PU10766EJ03V0DS
100
20
400
300
200
100
16
14
12
10
8
6
4
2
0
0
–10
–20
–30
–40
–50
–60
–70
–80
OUTPUT 3RD ORDER INTERCEPT POINT
vs. COLLECTOR CURRENT
40
30
20
10
40
30
20
10
–20
0
0
1
P
V
f1 = 1.000 GHz,
f2 = 1.001 GHz
out (each)
CE
EACH OUTPUT POWER, IM
vs. EACH INPUT POWER
= 5 V,
Each Input Power P
–10
IM
Collector Current I
3
0
10
10
in (each)
C
V
I
f1 = 1.000 GHz,
f2 = 1.001 GHz
NESG220033
C (set)
(mA)
CE
(dBm)
= 5 V,
= 40 mA,
20
3
100
30