NESG220033 Renesas Electronics Corporation., NESG220033 Datasheet - Page 3

• Manufacturer Part Number: NESG220033
• Description: Npn Silicon Germanium Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
Remark The graphs indicate nominal characteristics.
0.0001
1 000
0.001
0.01
100
500
200
150
100
480
0.1
10
50
0
1
0.4
0
0
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
CE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
= 3 V
25
Collector to Emitter Voltage V
0.5
Base to Emitter Voltage V
1
Ambient Temperature T
1 700 A
50
μ
3.8 cm × 9.0 cm × 0.8 mm (t),
FR–4
0.6
2
75
0.7
3
1 500 A
100
A
A
BE
(°C)
μ
I
B
= +25°C, unless otherwise specified)
CE
(V)
= 100 A
0.8
125
4
1 300 A
1 100 A
(V)
700 A
300 A
900 A
500 A
Data Sheet PU10766EJ03V0DS
μ
μ
μ
μ
μ
μ
μ
150
0.9
5
0.0001
0.001
0.01
100
0.1
1.1
1.0
0.9
0.8
0.7
0.6
0.5
10
1
0.4
REVERSE TRANSFER CAPACITANCE
0
vs. COLLECTOR TO BASE VOLTAGE
V
CE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
= 5 V
Collector to Base Voltage V
1
0.5
Base to Emitter Voltage V
2
0.6
3
0.7
NESG220033
4
BE
CB
f = 1 MHz
(V)
0.8
(V)
5
0.9
3