BB502M Renesas Electronics Corporation., BB502M Datasheet

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BB502M

Manufacturer Part Number
BB502M
Description
Mosfets Built In Biasing Circuit Mos Fet Ic Uhf Rf Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Manufacturer
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Part Number:
BB502M
Manufacturer:
Intersil
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Part Number:
BB502M
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RENESAS/瑞萨
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Part Number:
BB502MBS-TL
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HITACH
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BB502M
Built in Biasing Circuit MOS FET IC
UHF RF Amplifier
Features
Outline
Notes:
Rev.5.00 Aug 10, 2005 page 1 of 10
Built in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise; NF = 1.6 dB typ. at f = 900 MHz
High gain; PG = 22 dB typ. at f = 900 MHz
Withstanding to ESD;
Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4(SOT-143Rmod)
1. Marking is “BS–”.
2. BB502M is individual type number of RENESAS BBFET.
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
3
2
4
1
(Previous ADE-208-809C)
1. Source
2. Gate1
3. Gate2
4. Drain
REJ03G0833-0500
Aug.10.2005
Rev.5.00

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BB502M Summary of contents

Page 1

... Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. Provide mini mold packages; MPAK-4(SOT-143Rmod) Outline RENESAS Package code: PLSP0004ZA-A (Package name: MPAK-4) Notes: 1. Marking is “BS–”. 2. BB502M is individual type number of RENESAS BBFET. Rev.5.00 Aug 10, 2005 page REJ03G0833-0500 (Previous ADE-208-809C Source 3 2 ...

Page 2

Absolute Maximum Ratings Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Electrical Characteristics Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to ...

Page 3

Main Characteristics Test Circuit for Operating Items ( Input Rev.5.00 Aug 10, 2005 page |yfs|, Ciss, Coss, Crss, NF, PG) D(op) Gate 2 Gate 1 Drain Source Application Circuit V = ...

Page 4

Power Gain, Noise Figure Test Circuit Input ( 50Ω L1 L3: 29 Rev.5.00 Aug 10, 2005 page RFC ...

Page 5

Maximum Channel Power Dissipation Curve 200 150 100 100 Ambient Temperature Ta (°C) Drain Current vs. Gate1 Voltage 120 kΩ Gate1 ...

Page 6

Forward Transfer Admittance vs. Gate1 Voltage 180 kΩ kHz Gate1 Voltage V Power Gain vs. Gate Resistance ...

Page 7

Drain Current vs. Gate Resistance G2S 100 200 Gate Resistance R Noise Figure vs. Gate2 to Source Voltage Gate2 to Source Voltage V Gain Reduction ...

Page 8

S11 Parameter vs. Frequency 1.5 0 –.2 –.4 –.6 –1.5 –.8 –1 Test Condition G2S Zo ...

Page 9

S Parameter S11 f(MHz) MAG. ANG. 50 0.994 –2.8 100 0.994 –5.7 150 0.991 –9.2 200 0.985 –12.5 250 0.985 –15.5 300 0.975 –18.7 350 0.969 –22.0 400 0.962 –24.9 450 0.954 –27.7 500 0.945 –30.8 550 0.935 –33.8 600 ...

Page 10

... A-A Section Ordering Information Part Name BB502MBS-TL-E 3000 Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Aug 10, 2005 page Package Name MASS[Typ.] MPAK-4 / MPAK-4V 0.013g ...

Page 11

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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