BB502M Renesas Electronics Corporation., BB502M Datasheet - Page 6
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BB502M
Manufacturer Part Number
BB502M
Description
Mosfets Built In Biasing Circuit Mos Fet Ic Uhf Rf Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.BB502M.pdf
(11 pages)
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Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BB502M
Manufacturer:
Intersil
Quantity:
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Part Number:
BB502M
Manufacturer:
RENESAS/瑞萨
Quantity:
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Company:
Part Number:
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Manufacturer:
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Rev.5.00 Aug 10, 2005 page 6 of 10
30
25
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15
10
30
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18
12
30
25
20
15
10
5
0
6
100
5
0
0
0
V
R
f = 1 kHz
V
V
R
f = 900 MHz
V
V
f = 900 MHz
Forward Transfer Admittance
DS
G
Power Gain vs. Drain Current
DS
G2S
DS
G2S
G
Power Gain vs. Gate Resistance
Gate Resistance R
= 180 kΩ
= variable
Drain Current I
= 5 V
= V
1
Gate1 Voltage V
= V
= 4 V
= 4 V
vs. Gate1 Voltage
5
200
G1
G1
= 5 V
= 5 V
2
10
3
D
(mA)
G
500
G1
(kΩ)
15
(V)
2 V
4
4 V
3 V
1000
20
5
30
24
18
12
100
6
4
3
2
1
0
4
3
2
1
0
0
0
V
R
f = 1 kHz
Noise Figure vs. Gate Resistance
DS
V
V
f = 900 MHz
V
V
R
f = 900 MHz
G
Noise Figure vs. Drain Current
Forward Transfer Admittance
DS
G2S
DS
G2S
G
Gate Resistance R
= 270 kΩ
= 5 V
= variable
Gate1 Voltage V
1
Drain Current I
= V
= V
= 4 V
= 4 V
vs. Gate1 Voltage
5
200
G1
G1
= 5 V
2
= 5 V
10
3
D
500
G1
G
(mA)
(kΩ)
15
(V)
4
4 V
1000
20
5