BB502M Renesas Electronics Corporation., BB502M Datasheet - Page 6

• Manufacturer Part Number: BB502M
• Description: Mosfets Built In Biasing Circuit Mos Fet Ic Uhf Rf Amplifier
• Manufacturer: Renesas Electronics Corporation.

Rev.5.00 Aug 10, 2005 page 6 of 10
30
25
20
15
10
30
24
18
12
30
25
20
15
10
5
0
6
100
5
0
0
0
V
R
f = 1 kHz
V
V
R
f = 900 MHz
V
V
f = 900 MHz
Forward Transfer Admittance
DS
G
Power Gain vs. Drain Current
DS
G2S
DS
G2S
G
Power Gain vs. Gate Resistance
Gate Resistance R
= 180 kΩ
= variable
Drain Current I
= 5 V
= V
1
Gate1 Voltage V
= V
= 4 V
= 4 V
vs. Gate1 Voltage
5
200
G1
G1
= 5 V
= 5 V
2
10
3
D
(mA)
G
500
G1
(kΩ)
15
(V)
2 V
4
4 V
3 V
1000
20
5
30
24
18
12
100
6
4
3
2
1
0
4
3
2
1
0
0
0
V
R
f = 1 kHz
Noise Figure vs. Gate Resistance
DS
V
V
f = 900 MHz
V
V
R
f = 900 MHz
G
Noise Figure vs. Drain Current
Forward Transfer Admittance
DS
G2S
DS
G2S
G
Gate Resistance R
= 270 kΩ
= 5 V
= variable
Gate1 Voltage V
1
Drain Current I
= V
= V
= 4 V
= 4 V
vs. Gate1 Voltage
5
200
G1
G1
= 5 V
2
= 5 V
10
3
D
500
G1
G
(mA)
(kΩ)
15
(V)
4
4 V
1000
20
5