BB502M Renesas Electronics Corporation., BB502M Datasheet - Page 5
BB502M
Manufacturer Part Number
BB502M
Description
Mosfets Built In Biasing Circuit Mos Fet Ic Uhf Rf Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.BB502M.pdf
(11 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BB502M
Manufacturer:
Intersil
Quantity:
30
Part Number:
BB502M
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Company:
Part Number:
BB502MBS-TL
Manufacturer:
HITACH
Quantity:
72 000
Rev.5.00 Aug 10, 2005 page 5 of 10
200
150
100
50
20
16
12
20
16
12
8
4
8
4
0
0
0
Drain Current vs. Gate1 Voltage
V
R
V
R
Ambient Temperature Ta (°C)
Drain Current vs. Gate1 Voltage
DS
G
DS
G
Maximum Channel Power
Gate1 Voltage V
Gate1 Voltage V
= 120 kΩ
= 270 kΩ
= 5 V
1
1
= 5 V
50
Dissipation Curve
2
2
100
3
3
G1
G1
150
(V)
(V)
4
4
200
5
5
30
24
18
12
20
16
12
20
16
12
6
8
4
8
4
0
0
0
Drain to Source Voltage V
V
V
V
R
V
R
f = 1 kHz
Forward Transfer Admittance
Drain Current vs. Gate1 Voltage
DS
Typical Output Characteristics
G2S
G1
G
DS
G
Gate1 Voltage V
= 180 kΩ
= 120 kΩ
= V
= 5 V
Gate1 Voltage V
= 5 V
1
1
1
= 4 V
vs. Gate1 Voltage
DS
2
2
2
3
3
3
G1
3 V
G1
(V)
(V)
4
4
4
DS
4 V
(V)
2 V
5
5
5