BB502M Renesas Electronics Corporation., BB502M Datasheet - Page 9
BB502M
Manufacturer Part Number
BB502M
Description
Mosfets Built In Biasing Circuit Mos Fet Ic Uhf Rf Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.BB502M.pdf
(11 pages)
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S Parameter
Rev.5.00 Aug 10, 2005 page 9 of 10
f(MHz)
1000
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
50
MAG.
0.994
0.994
0.991
0.985
0.985
0.975
0.969
0.962
0.954
0.945
0.935
0.925
0.918
0.909
0.898
0.887
0.874
0.862
0.855
0.845
S11
ANG.
–12.5
–15.5
–18.7
–22.0
–24.9
–27.7
–30.8
–33.8
–36.6
–39.5
–42.5
–45.0
–47.8
–50.6
–53.0
–55.5
–58.1
–2.8
–5.7
–9.2
MAG.
2.52
2.51
2.50
2.47
2.46
2.43
2.40
2.38
2.35
2.31
2.28
2.25
2.21
2.18
2.14
2.09
2.07
2.03
1.99
1.95
S21
ANG.
176.2
172.4
168.1
164.1
160.0
156.4
152.3
148.6
144.6
141.0
136.7
133.4
130.3
126.1
122.9
119.5
116.0
112.7
109.4
106.1
(V
DS
0.00072
0.00161
0.00230
0.00297
0.00374
0.00436
0.00507
0.00557
0.00625
0.00663
0.00721
0.00747
0.00761
0.00807
0.00828
0.00801
0.00815
0.00832
0.00738
0.00802
MAG.
= V
G1
= 5V, V
S12
ANG.
88.6
80.9
86.6
78.0
78.9
80.6
70.9
77.3
72.4
70.0
70.5
68.4
65.6
65.6
67.6
65.1
63.6
65.1
61.8
65.8
G2S
= 4V, R
G
MAG.
0.995
0.998
0.997
0.996
0.994
0.992
0.990
0.989
0.987
0.984
0.981
0.978
0.975
0.972
0.969
0.965
0.961
0.958
0.954
0.951
= 180kΩ, Zo = 50Ω)
S22
–10.2
–12.2
–14.2
–16.3
–18.5
–20.4
–22.4
–24.3
–26.4
–28.3
–30.2
–32.2
–34.2
–36.1
–37.9
–39.8
ANG.
–2.2
–4.0
–6.2
–8.2