BLW60C NXP Semiconductors, BLW60C Datasheet - Page 10

• Manufacturer Part Number: BLW60C
• Description: Vhf Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
R.F. performance in s.s.b. class-AB operation
V
f
Note
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
March 1993
1
handbook, full pagewidth
CE
= 28,000 MHz; f
VHF power transistor
OUTPUT POWER
Relative to the according peak envelope powers these figures should be increased by 6 dB.
= 12,5 V; T
3 to 30 (P.E.P.)
R S =
50
W
h
up to 25 C; R
R4
R3
2
TR1
= 28,001 MHz
C1
C2
C16
C15
typ 19,5
dB
G
th mb-h
p
TR2
R5
R6
C3
V B = 12.5 V
0,45 K/W
C4
Fig.15 S.S.B. class-AB test circuit.
L1
bias
typ 35
%
dt
L2
T.U.T.
C5
R1
10
typ 33
C9
dB
d
3
C7
C8
(1)
R2
C6
L4
L3
typ 36
C10
C11
C12
dB
d
5
(1)
L5
C13
V B = 12.5 V
Product specification
C14
MGP492
BLW60C
I
R L =
50
C(ZS)
mA
25