BLW60C NXP Semiconductors, BLW60C Datasheet - Page 2

• Manufacturer Part Number: BLW60C
• Description: Vhf Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile, industrial
and military transmitters with a
nominal supply voltage of 12,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.
QUICK REFERENCE DATA
R.F. performance up to T
PIN CONFIGURATION
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
March 1993
c.w. (class-B)
s.s.b. (class-AB)
MODE OF OPERATION
VHF power transistor
handbook, halfpage
Fig.1 Simplified outline. SOT120A.
h
1
= 25 C
12,5
12,5 1,6-28
V
V
CC
4
MHz
175
f
Matched h
request.
It has a 3/8" capstan envelope with a
ceramic cap. All leads are isolated
from the stud.
2
3-30 (P.E.P.) typ. 19,5
MSB056
P
45
W
FE
L
3
groups are available on
2
dB
G
5,0
L
typ. 35
%
75
PINNING - SOT120A.
1,2
PIN
1
2
3
4
z
i
j1,4
collector
emitter
base
emitter
2,6
Product specification
DESCRIPTION
Z
L
j1,2
BLW60C
typ.
dB
d
3
33