BLW60C NXP Semiconductors, BLW60C Datasheet - Page 6

• Manufacturer Part Number: BLW60C
• Description: Vhf Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
APPLICATION INFORMATION
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); T
Test circuit for 175 MHz
List of components:
March 1993
handbook, full pagewidth
C1 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
C2 = C8 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)
C3a = C3b = 47 pF ceramic capacitor (500 V)
C4 = 120 pF ceramic capacitor
C5 = 100 nF polyester capacitor
C6a = C6b = 8,2 pF ceramic capacitor (500 V)
C7 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)
L1 = 1 turn Cu wire (1,6 mm); int. dia. 9,0 mm; leads 2
L2 = 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2
L3 = L8 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L4 = L5 = strip (12 mm
L6 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 5,0 mm; length 6,0 mm; leads 2
L7 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 4,5 mm; length 6,0 mm; leads 2
L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16".
R1 = 10
R2 = 4,7
Component layout and printed-circuit board for 175 MHz test circuit: Fig.8.
f (MHz)
VHF power transistor
175
175
( 10%) carbon resistor
( 5%) carbon resistor
V
CC
12,5
13,5
(V)
50
P
6 mm); taps for C3a and C3b at 5 mm from transistor
L
45
45
C1
(W)
C2
L1
P
Fig.7 Class-B test circuit at f = 175 MHz.
S
14,2
(W)
R1
L2
L3
L4
G
typ. 6,0
C3a
C3b
p
(dB)
T.U.T.
5,0
5 mm
6
L5
I
C
C4
4,8
(A)
V CC
L6
L8
C5
L7
typ. 75
R2
(%)
MGP484
75
C6b
C6a
h
C7
5 mm
5 mm
= 25 C
1,2
z
5 mm
C8
i
( )
j1,4
50
Product specification
BLW60C
2,6
Z
L
( )
j1,2