SQD50P04-09L Vishay, SQD50P04-09L Datasheet - Page 3

• Manufacturer Part Number: SQD50P04-09L
• Description: P-channel 40 V D-s 175 ?c Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS T
Document Number: 65018
S09-1034-Rev. A, 08-Jun-09
8000
7000
6000
5000
4000
3000
2000
1000
100
120
100
80
60
40
20
80
60
40
20
0
0
0
0
0
0
C
rss
5
20
1
V
V
V
DS
GS
10
V
DS
Output Characteristics
GS
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
Transconductance
= 10 V thru 5 V
15
Capacitance
40
2
C
20
oss
60
3
C
25
iss
T
30
C
A
= - 55 °C
80
4
= 25 °C, unless otherwise noted
4 V
25 °C
125 °C
35
3 V
2 V
100
40
5
0.020
0.016
0.012
0.008
0.004
0.000
100
80
60
40
20
10
0
8
6
4
2
0
0.0
0
0
V
I
0.5
D
DS
= 50 A
20
= 20 V
On-Resistance vs. Drain Current
20
1.0
V
GS
Q
Transfer Characteristics
- Gate-to-Source Voltage (V)
g
1.5
I
40
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
40
25 °C
T
SQD50P04-09L
2.0
C
V
= 125 °C
60
GS
Vishay Siliconix
2.5
= 4.5 V
60
V
GS
3.0
80
= 10 V
- 55 °C
www.vishay.com
3.5
80
100
4.0
100
120
4.5
3