SQD50P04-09L Vishay, SQD50P04-09L Datasheet - Page 4

• Manufacturer Part Number: SQD50P04-09L
• Description: P-channel 40 V D-s 175 ?c Mosfet
• Manufacturer: Vishay

SQD50P04-09L
Vishay Siliconix
TYPICAL CHARACTERISTICS T
THERMAL RATINGS T
www.vishay.com
4
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Maximum Drain Current vs. Ambient Temperature
60
50
40
30
20
10
- 50 - 25
0
0
On-Resistance vs. Junction Temperature
V
I
D
GS
= 50 A
25
= 10 V
0
T
J
T
- Junction Temperature (°C)
50
C
25
- Case Temperature (°C)
50
A
75
= 25 °C, unless otherwise noted
75
100
100
125
A
125
= 25 °C, unless otherwise noted
150
150
175
175
100
1000
10
100
10
1
0.0
1
0.1
* V
Limited by R
GS
Source Drain Diode Forward Voltage
0.3
> minimum V
V
V
Limited
SD
DS
T
I
D(on)
J
= 150 °C
- Source-to-Drain Voltage (V)
- Drain-to-Source Voltage (V)
DS(on)
Safe Operating Area
Single Pulse
1
T
0.6
C
*
= 25 °C
GS
at which R
BVDSS Limited
I
DM
0.9
S09-1034-Rev. A, 08-Jun-09
T
J
Document Number: 65018
Limited
= 25 °C
10
DS(on)
1.2
is specified
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
100
1.5