MBM29DL161TE-70TN Meet Spansion Inc., MBM29DL161TE-70TN Datasheet - Page 45

• Manufacturer Part Number: MBM29DL161TE-70TN
• Description: Flash Memory Cmos 16m 2m ? 8/1m ? 16 Bit Dual Operation
• Manufacturer: Meet Spansion Inc.

• Low V
To avoid initiation of a write cycle during V
than V
disabled. Under this condition the device will reset to the read mode. Subsequent writes will be ignored until the
V
prevent unintentional writes when V
If Embedded Erase Algorithm is interrupted, there is possibility that the erasing sector(s) cannot be used.
• Write Pulse “Glitch” Protection
Noise pulses of less than 3 ns (typical) on OE, CE, or WE will not initiate a write cycle.
• Logical Inhibit
Writing is inhibited by holding any one of OE = V
must be a logic “0” while OE is a logic “1”.
• Power-Up Write Inhibit
Power-up of the devices with WE = CE = V
The internal state machine is automatically reset to the read mode on power-up.
• Sector Group Protection
Device user is able to protect each sector group individually to store and protect data. Protection circuit voids
both program and erase commands that are addressed to protected sectors.
Any command to program or erase addressed to protected sector are ignored (see “Sector Group Protection”
in ■ FUNCTIONAL DESCRIPTION).
CC
level is greater than V
LKO
CC
(Min). If V
Write Inhibit
CC
< V
LKO
LKO
, the command register is disabled and all internal program/erase circuits are
. It is the users responsibility to ensure that the control pins are logically correct to
CC
Retired Product DS05-20880-5E_July 13, 2007
is above V
CC
IL
and OE = V
power-up and power-down, a write cycle is locked out for V
IL
LKO
, CE = V
(Min).
MBM29DL16XTE/BE
IH
will not accept commands on the rising edge of WE.
IH
, or WE = V
IH
. To initiate a write cycle CE and WE
70/90
CC
less
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