MBM29LV160TE70TN Meet Spansion Inc., MBM29LV160TE70TN Datasheet - Page 28

• Manufacturer Part Number: MBM29LV160TE70TN
• Description: Flash Memory Cmos 16m 2m ? 8/1m ? 16 Bit
• Manufacturer: Meet Spansion Inc.

MBM29LV160TE
/MBM29LV160BE
70/90
70/90
the V
level is greater than V
. It is the users responsibility to ensure that the control pins are logically correct
CC
LKO
to prevent unintentional writes when V
is above V
(Min).
CC
LKO
If the Embedded Erase Algorithm is interrupted, there is possibility that the erasing sector(s) will need to be
erased again prior to programming.
• Write Pulse “Glitch” Protection
Noise pulses of less than 3 ns (typical) on OE, CE, or WE will not change the command registers.
• Logical Inhibit
Writing is inhibited by holding any one of OE = V
, CE = V
, or WE = V
. To initiate a write, CE and WE must
IL
IH
IH
be a logical zero while OE is a logical one.
• Power-up Write Inhibit
Power-up of the devices with WE = CE = V
and OE = V
will not accept commands on the rising edge of WE.
IL
IH
The internal state machine is automatically reset to read mode on power-up.
28
Retired Product DS05-20883-7E_July 31, 2007