MBM29LV160TE70TN Meet Spansion Inc., MBM29LV160TE70TN Datasheet - Page 5

no-image

MBM29LV160TE70TN

Manufacturer Part Number
MBM29LV160TE70TN
Description
Flash Memory Cmos 16m 2m ? 8/1m ? 16 Bit
Manufacturer
Meet Spansion Inc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBM29LV160TE70TN
Manufacturer:
FUJ
Quantity:
632
Part Number:
MBM29LV160TE70TN-JKP
Manufacturer:
SPANSION
Quantity:
2 122
Part Number:
MBM29LV160TE70TN-L
Manufacturer:
SPANSION
Quantity:
468
Part Number:
MBM29LV160TE70TN-L
Manufacturer:
TOSHIBA
Quantity:
5 532
(Continued)
*:
■ PACKAGES
Embedded Erase
Any individual sector is typically erased and verified in 1.0 second (if already preprogrammed).
The device also features sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. The MBM29LV160TE/BE is erased when shipped from the factory.
The device features single 3.0 V power supply operation for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low V
inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ
by the Toggle Bit feature on DQ
completed, the device internally resets to the read mode.
The MBM29LV160TE/BE also has a hardware RESET pin. When this pin is driven low, execution of any Em-
bedded Program Algorithm or Embedded Erase Algorithm is terminated. The internal state machine is then
reset to the read mode. The RESET pin may be tied to the system reset circuitry. Therefore, if a system reset
occurs during the Embedded Program Algorithm or Embedded Erase Algorithm, the device is automatically
reset to the read mode and will have erroneous data stored in the address locations being programmed or
erased. These locations need re-writing after the Reset. Resetting the device enables the system’s micropro-
cessor to read the boot-up firmware from the Flash memory.
Fujitsu’s Flash technology combines years of Flash memory manufacturing experience to produce the highest
levels of quality, reliability, and cost effectiveness. The MBM29LV160TE/BE memory electrically erases all bits
within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word
at a time using the EPROM programming mechanism of hot electron injection.
TM
and Embedded Program
48-pin plastic TSOP (1)
48-pin plastic CSOP
(LCC-48P-M03)
(FPT-48P-M19)
MBM29LV160TE
Marking Side
6
, or the RY/BY output pin. Once the end of a program or erase cycle has been
TM
Retired Product DS05-20883-7E_July 31, 2007
are trademarks of Advanced Micro Devices, Inc.
70/90
/MBM29LV160BE
Marking Side
48-pin plastic TSOP (1)
48-ball plastic FBGA
(BGA-48P-M11)
(FPT-48P-M20)
CC
detector automatically
70/90
7
,
5

Related parts for MBM29LV160TE70TN