MBM29LV160TE Fujitsu Microelectronics, Inc., MBM29LV160TE Datasheet

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MBM29LV160TE

Manufacturer Part Number
MBM29LV160TE
Description
16m 2m X 8/1m X 16 Bit
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet

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FUJITSU SEMICONDUCTOR
FLASH MEMORY
CMOS
16M (2M
MBM29LV160TE/BE -
Ordering Part No.
Max. Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
GENERAL DESCRIPTION
The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words
of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA
packages. The device is designed to be programmed in-system with the standard system 3.0 V V
V V
standard EPROM programmers.
The standard MBM29LV160TE/BE offers access times of 70 ns, 90 ns and 120 ns, allowing operation of high-
speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE),
write enable (WE), and output enable (OE) controls.
The MBM29LV160TE/BE is pin and command set compatible with JEDEC standard E
written to the command register using standard microprocessor write timings. Register contents serve as input
to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch
addresses and data needed for the programming and erase operations. Reading data out of the device is similar
to reading from 5.0 V and 12.0 V Flash or EPROM devices.
The MBM29LV160TE/BE is programmed by executing the program command sequence. This will invoke the
Embedded Program
and verifies proper cell margins. Typically, each sector can be programmed and verified in about 0.5 seconds.
Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase
Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed
before executing the erase operation. During erase, the device automatically times the erase pulse widths and
verifies proper cell margins.
Any individual sector is typically erased and verified in 1.0 second. (If already preprogrammed.)
within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word
at a time using the EPROM programming mechanism of hot electron injection.
PRODUCT LINE UP
DATA SHEET
PP
and 5.0 V V
Part No.
CC
V
V
TM*
CC
CC
are not required for write or erase operations. The device can also be reprogrammed in
Algorithm which is an internal algorithm that automatically times the program pulse widths
= 3.3 V
= 3.0 V
+0.3 V
–0.3 V
+0.6 V
–0.3 V
8/1M
70/90/12
70
70
70
30
MBM29LV160TE/160BE
16) BIT
90
90
90
35
2
PROMs. Commands are
DS05-20883-2E
CC
120
120
12
50
supply. 12.0
(Continued)
TM*

Related parts for MBM29LV160TE

MBM29LV160TE Summary of contents

Page 1

... MBM29LV160TE/BE - GENERAL DESCRIPTION The MBM29LV160TE/ 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA packages. The device is designed to be programmed in-system with the standard system 3 and 5 ...

Page 2

... Toggle Bit feature on DQ comleted, the device internally resets to the read mode. The MBM29LV160TE/BE also has a hardware RESET pin. When this pin is driven low, execution of any Em- bedded Program Algorithm or Embedded Erase Algorithm is terminated. The internal state machine is then reset to the read mode. The RESET pin may be tied to the system reset circuitry. Therefore system reset ...

Page 3

... Hardware method disables any combination of sectors from program or erase operations • Sector Protection Set function by Extended sector Protection command • Fast Programming Function by Extended command • Temporary sector unprotection Temporary sector unprotection via the RESET pin • In accordance with CFI (Common Flash Memory Interface) MBM29LV160TE/BE 2 PROMs -70/90/12 3 ...

Page 4

... MBM29LV160TE/BE PIN ASSIGNMENTS N.C. WE RESET N.C. N.C. RY/ RY/BY N.C. N.C. RESET WE N. ...

Page 5

... MBM29LV160TE/BE CSOP (TOP VIEW) 1 (Marking side ...

Page 6

... MBM29LV160TE/BE BLOCK DIAGRAM V CC RY/BY Buffer State BYTE Control RESET Command Register CE OE Low V Detector -70/90/12 RY/BY Erase Voltage Generator Program Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer for Address Program/Erase Latch X-Decoder Input/Output ...

Page 7

... LOGIC SYMBOL RY/BY WE RESET BYTE MBM29LV160TE/BE Table 1 MBM29LV160TE/BE Pin Configuration Pin Function Address Inputs - Data Inputs/Outputs Chip Enable OE Output Enable WE Write Enable RY/BY Ready/Busy Output Hardware Reset Pin/ ...

Page 8

... Standby Output Disable Write (Program/Erase) Enable Sector Protection (2), (4) Verify Sector Protection (2), (4) Temporary Sector Unprotection (5) Reset (Hardware)/Standby Table 3 MBM29LV160TE/BE User Bus Operation (BYTE = V Operation Auto-Select Manufacture Code (1) Auto-Select Device Code (1) Read (3) Standby Output Disable Write (Program/Erase) Enable Sector Protection (2), (4) ...

Page 9

... Kbytes or 32 Kwords SA31 32 Kbytes or 16 Kwords SA32 8 Kbytes or 4 Kwords SA33 8 Kbytes or 4 Kwords SA34 16 Kbytes or 8 Kwords MBM29LV160TE Top Boot Sector Architecture MBM29LV160TE/ Address Range ( 16) Address Range 00000H to 0FFFFH 00000H to 07FFFH 10000H to 1FFFFH 08000H to 0FFFFH 20000H to 2FFFFH 10000H to 17FFFH ...

Page 10

... MBM29LV160TE/BE Sector Sector Size SA0 16 Kbytes or 8 Kwords SA1 8 Kbytes or 4 Kwords SA2 8 Kbytes or 4 Kwords SA3 32 Kbytes or 16 Kwords SA4 64 Kbytes or 32 Kwords SA5 64 Kbytes or 32 Kwords SA6 64 Kbytes or 32 Kwords SA7 64 Kbytes or 32 Kwords SA8 64 Kbytes or 32 Kwords SA9 ...

Page 11

... CE pin from “H” or “L”. • Standby Mode There are two ways to implement the standby mode on the MBM29LV160TE/BE devices. One is by using both the CE and RESET pins; the other via the RESET pin only. ...

Page 12

... Table 7, Command Definitions. Byte represents the manufacture’s code and byte For the MBM29LV160TE/BE these two bytes are given in the Table 4.2. All identifiers for manufactures and device will exhibit odd parity with DQ executing the Autoselect, A must ...

Page 13

... SA30 SA31 SA32 SA33 SA34 MBM29LV160TE/BE Sector Address Tables (MBM29LV160TE Address Range 00000H to 0FFFFH 10000H to 1FFFFH 20000H to 2FFFFH 30000H to 3FFFFH ...

Page 14

... MBM29LV160TE/BE Table 6 Sector Address SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 ...

Page 15

... Refer to AC Write Characteristics and the Erase/Programming Waveforms for specific timing parameters. • Sector Protection The MBM29LV160TE/BE features hardware sector protection. This feature will disable both program and erase operations in any number of sectors (0 through 34). The sector protection feature is enabled using programming equipment at the user’ ...

Page 16

... Byte XXXH *1 Extended Word Sector 4 XXXH 60H Protection Byte *2 Word 55H Query *3 1 Byte AAH 16 -70/90/12 MBM29LV160TE/BE Standard Command Definitions Second Third Bus Bus Write Cycle Write Cycle — — — — 2AAH 555H AAH 55H F0H 555H AAAH 2AAH 555H AAH ...

Page 17

... Byte Mode: AAAH or 555H to addresses A 7. Both Read/Reset commands are functionally equivalent, resetting the device to the read mode. *1: This command is valid while Fast Mode. *2: This command is valid while RESET = V *3: The valid addresses are A *4: The data “00H” is also acceptable. MBM29LV160TE/ ...

Page 18

... XX00H retrieves the manufacture code of 04H. A read cycle from address XX01H for 16 (XX02H for 8) retrieves the device code (MBM29LV160TE = C4H and MBM29LV160BE = 49H for 8 mode; MBM29LV160TE = 22C4H and MBM29LV160BE = 2249H for 16 mode). ...

Page 19

... The Erase Suspend command allows the user to interrupt a Sector Erase operation and then perform data reads from or program to a sector not being erased. This command is applicable ONLY during the Sector Erase operation which includes the time-out period for sector erase. The Erase Suspend command will be ignored if MBM29LV160TE/BE TM Algorithm using typical command strings and bus operations. ...

Page 20

... MBM29LV160TE/BE written during the Chip Erase operation or Embedded Program Algorithm. Writting the Erase Suspend command during the Sector Erase time-out results in immediate termination of the time-out period and suspension of the erase operation. Writing the Erase Resume command resumes the erase operation. The addresses are “DON’T CARES” when writing the Erase Suspend or Erase Resume commands ...

Page 21

... Extended Command (1) Fast Mode MBM29LV160TE/BE has Fast Mode function. This mode dispenses with the initial two unlock cycles required in the standard program command sequence writing Fast Mode command into the command register. In this mode, the required bus cycle for programming is two cycles instead of four bus cycles in standard program command ...

Page 22

... DQ 7 Data Polling The MBM29LV160TE/BE device features Data Polling as a method to indicate to the host that the Embedded Algorithms are in progress or completed. During the Embedded Program Algorithm, an attempt to read the devices will produce the complement of the data last written to DQ Algorithm, an attempt to read the device will produce the true data last written to DQ Erase Algorithm, an attempt to read the device will produce a “ ...

Page 23

... DQ 6 Toggle Bit I The MBM29LV160TE/BE also feature the “Toggle Bit I” method to indicate to the host system that the Embedded Algorithms are in progress or completed. During an Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data from the device will result in DQ toggling between one and zero ...

Page 24

... RY/BY Ready/Busy Pin The MBM29LV160TE/BE provides a RY/BY open-drain output pin as a way to indicate to the host system that the Embedded Algorithms are either in progress or has been completed. If the output is low, the device is busy with either a program or erase operation. If the output is high, the device is ready to accept any read/write or erase operation ...

Page 25

... Byte/Word Configuration The BYTE pin selects the byte (8-bit) mode or word (16-bit) mode for the MBM29LV160TE/BE device. When this pin is driven high, the device operates in the word (16-bit) mode. The data is read and programmed ...

Page 26

... MBM29LV160TE/BE Table 10 Description A Query-unique ASCII string “QRY” Primary OEM Command Set 2h: AMD/FJ standard type Address for Primary Extended Table Alternate OEM Command Set (00h = not applicable) Address for Alternate OEM Extended Table V Min. (write/erase) CC D7-4: volt, D3-0: 100 mvolt V Max. (write/erase) CC D7-4: volt, D3-0: 100 mvolt V Min ...

Page 27

... No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand. MBM29LV160TE/BE Symbol Min. Tstg – ...

Page 28

... MBM29LV160TE/BE MAXIMUM OVERSHOOT +0.6 V -0.5 V -2.0 V Figure 1 Maximum Negative Overshoot Waveform +2.0 V Figure 2 Maximum Positive Overshoot Waveform 1 +14.0 V +13 0 Note : This waveform is applied for A Figure 3 Maximum Positive Overshoot Waveform 2 28 -70/90/ OE, and RESET. ...

Page 29

... DC operating current and the frequency dependent component active while Embedded Erase or Embedded Program is in progress Automatic sleep mode enables the low power mode when address remain stable for 150 ns – not exceed MBM29LV160TE/BE Test Conditions Max ...

Page 30

... MBM29LV160TE/ Characteristics • Read Only Operations Characteristics Parameter Symbols JEDEC Standard t t Read Cycle Time AVAV Address to Output Delay AVQV ACC t t Chip Enable to Output Delay ELQV Output Enable to Output Delay GLQV Chip Enable to Output HIGH-Z EHQZ ...

Page 31

... Write Pulse Width (Note 2) WPP — Setup Time to WE Active (Note 2) OESP — Setup Time to WE Active (Note 2) CSP — t Recover Time From RY/BY RB MBM29LV160TE/BE Description Min. Min. Min. Min. Min. Min. Read Min. Toggle and Data Polling Min. Min. Min. ...

Page 32

... MBM29LV160TE/BE (Continued) Parameter Symbols JEDEC Standard — t RESET Pulse Width RP — t RESET High Level Period Before Read RH — t Program/Erase Valid to RY/BY Delay BUSY — t Delay Time from Embedded Output Enable EOE — t BYTE Switching Low to Output HIGH-Z FLQZ — t BYTE Switching High to Output Active FHQV — ...

Page 33

... Sector Erase Time Byte Programming Time Word Programming Time Chip Programming Time Erase/Program Cycle PIN CAPACITANCE Parameter Input Capacitance C Output Capacitance C Control Pin Capacitance C Note: Test conditions T = 25° 1.0 MHz A MBM29LV160TE/BE Limits Min. Typ. Max. — — 8 300 — 16 360 — 16.8 ...

Page 34

... MBM29LV160TE/BE TIMING DIAGRAM • Key to Switching Waveforms Addresses Outputs 34 -70/90/12 WAVEFORM INPUTS OUTPUTS Will Be Must Be Steady Steady Will Be May Change Change from from May Will Be Change Change from from “H” or “L”; Changing, Any Change State ...

Page 35

... Addresses t RH RESET High-Z Outputs Figure 5.2 Hardware Reset/Read Operation Timing Diagram MBM29LV160TE/ Addresses Stable t ACC Output Valid -70/90/ ...

Page 36

... MBM29LV160TE/BE 3rd Bus Cycle 555H Addresses GHWL A0H Data Notes address of the memory location to be programmed data to be programmed at word address the output of the complement of the data written to the device the output of the data written to the device. ...

Page 37

... OUT 5. Figure indicates last two bus cycles out of four bus cycle sequence. 6. These waveforms are for the 16 mode. (The addresses differ from 8 mode.) Figure 7 Alternate CE Controlled Program Operation Timing Diagram MBM29LV160TE/BE Data Polling ...

Page 38

... MBM29LV160TE/BE Addresses 555H GHWL WE Data t VCS the sector address for Sector Erase. Addresses = 555H (Word), AAAH (Byte) for Chip Erase. 2. These waveforms are for the 16 mode. (The addresses differ from 8 mode.) Figure 8 Chip/Sector Erase Operation Timing Diagram ...

Page 39

... OEH WE Data Data BUSY RY/ Valid Data (The device has completed the Embedded operation). 7 Figure 9 Data Polling during Embedded Algorithm Operation Timing Diagram MBM29LV160TE/ Valid Data t WHWH1 Output Flag 0 ...

Page 40

... MBM29LV160TE/ OES OE Data ( Stops toggling. (The device has completed the Embedded operation.) 6 Figure 10 Taggle Bit I during Embedded Algorithm Operation Timing Diagram Enter Embedded Suspend Erasing WE Erase Toggle DQ and With OE Note read from the erase-suspended sector. ...

Page 41

... CE WE RY/BY Figure 12 RY/BY Timing Diagram during Program/Erase Operation Timing Diagram WE RESET t RY/BY Figure 13 RESET, RY/BY Timing Diagram MBM29LV160TE/BE The rising edge of the last WE signal Entlre programming or erase operations t BUSY READY -70/90/12 41 ...

Page 42

... MBM29LV160TE/BE CE BYTE ELFH Figure 14 Timing Diagram for Word Mode Configuration CE BYTE t ELFL Figure 15 Timing Diagram for Byte Mode Configuration BYTE Figure 16 BYTE Timing Diagram for Write Operations 42 -70/90/ Data Output Data Output ...

Page 43

... VLHT WE t CSP CE Data t VCS V CC SAX : Sector Address for initial sector SAY : Sector Address for next sector Note byte mode Figure 17 Sector Protection Timing Diagram MBM29LV160TE/ VLHT VLHT t WPP t OESP -70/90/12 SAY 01H ...

Page 44

... MBM29LV160TE/ VIDR t VCS RESET CE WE RY/BY Figure 18 Temporary Sector Unprotection Timing Diagram 44 -70/90/12 t Program or Erase Command Sequence VLHT Unprotection period t VLHT VLHT ...

Page 45

... Add Data 60H SPAX : Sector Address to be protected SPAY : Next Sector Address to be protected TIME-OUT : Time-Out window = 250 s (min) Figure 19 Extended Sector Protection Timing Diagram MBM29LV160TE/ SPAX TIME-OUT 40H 60H -70/90/12 SPAX SPAY 01H 60H ...

Page 46

... MBM29LV160TE/BE FLOW CHART EMBEDDED ALGORITHM Increment Address * : The sequence is applied for 16 mode. The addresses differ from 8 mode. 46 -70/90/12 Start Write Program Command Sequence (See Below) Data Polling Davice Verify Byte ? Yes No Last Address ? Yes Programming Completed Program Command Sequence* (Address/Command) : 555H/AAH 2AAH/55H ...

Page 47

... Chip Erase Command Sequence* (Address/Command) : 555H/AAH 2AAH/55H 555H/80H 555H/AAH 2AAH/55H 555H/10H * : The sequence is applied for 16 mode. The addresses differ from 8 mode. Figure 21 Embedded Erase MBM29LV160TE/BE Start Write Erase Command Sequence (See Below) Data Polling or Toggle Bit from Device No Data = FFH ? Yes ...

Page 48

... MBM29LV160TE/ rechecked even -70/90/12 VA =Address for programming Start Read Byte ( Addr Yes DQ = Data ? Yes Read Byte ( Addr Yes DQ = Data ? Fail Pass = “1” because DQ may change simultaneously with Figure 22 Data Polling Algorithm ...

Page 49

... rechecked even “1” because changing to “1”. 5 Figure 23 Toggle Bit Algorithm MBM29LV160TE/BE Start Read ( Addr. = “H” or “L” Toggle 6 ? Yes Yes Read Byte ( Addr. = “H” or “L” ...

Page 50

... MBM29LV160TE/BE Increment PLSCNT PLSCNT = 25 ? Pemove V Write Reset Command * : byte mode -70/90/12 Start Setup Sector Addr PLSCNT = RESET = Activate WE Pulse Time out 100 µs ...

Page 51

... Notes: 1. All protected sectors are unprotected. 2. All previously protected sectors are protected once again. Figure 25 Temporary Sector Unprotection Algorithm MBM29LV160TE/BE Start RESET = V ID (Note 1) Perform Erase or Program Operations RESET = V IH Temporary Sector Unprotection Completed (Note 2) -70/90/12 51 ...

Page 52

... MBM29LV160TE/BE FAST MODE ALGORITHM Increment Address * : The sequence is applied for 16 mode The addresses differ from 8 mode. Figure 26 Embedded Programming Algorithm for Fast Mode 52 -70/90/12 Start 555H/AAH 2AAH/55H 555H/20H XXXXH/A0H Program Address/Program Data Data Polling Device No Verify Byte ? Yes No Last Address ? Yes Programming Completed ...

Page 53

... Read from Sector Protect PLSCNT = 25 ? Data = 01H ? Yes Protect Other Sector Remove V from RESET ID Write Reset Command Remove V Device Failed Write Reset Command Sector Protection Completed Figure 27 Extended Sector Protection Algorithm MBM29LV160TE/BE Start ID Yes = ...

Page 54

... Standard Products Fujitsu standard products are available in several packages. The order number is formed by a combination of: MBM29LV160 T E DEVICE NUMBER/DESCRIPTION MBM29LV160 16 Mega-bit (2M 3.0 V-only Read, Write, and Erase Valid Combinations MBM29LV160TE/BE 54 -70/90/ PACKAGE TYPE TN = 48-Pin Thin Small Outline Package (TSOP) Standard Pinout TR = 48-Pin Thin Small Outline Package ...

Page 55

... LEAD No. 1 INDEX 24 20.00±0.20 (.787±.008) * 18.40±0.20 (.724±.008) 0.10(.004) 19.00±0.20 (.748±.008) 1996 FUJITSU LIMITED F48029S-2C-2 C MBM29LV160TE/BE *: Resin protruction. (Each side: 0.15(.006) Max) 48 Details of "A" part 0.15(.006) "A" 0.15(.006) 0.25(.010 12.00±0.20 (.472±.008) 11.50REF (.460) ...

Page 56

... MBM29LV160TE/BE 48-pin plastic TSOP (I) (FPT-48P-M20) LEAD No. 1 INDEX 24 19.00±0.20 (.748±.008) 0.10(.004) * 18.40±0.20 (.724±.008) 20.00±0.20 (.787±.008) 1996 FUJITSU LIMITED F48030S-2C -70/90/12 *: Resin protrusion. (Each side: 0.15(.006) Max) 48 Details of "A" part "A" 0.15(.006) 25 0.50±0.10 (.020±.004) 0.15± ...

Page 57

... CSOP (LCC-48P-M03) 48 INDEX LEAD No. 1 10.00±0.10(.394±.004) 0.40(.016) 0.08(.003) TYP 9.20(.362)REF 1998 FUJITSU LIMITED C48056S-1C-1 C MBM29LV160TE/BE "A" 25 10.00±0.20 (.394±.008) 9.50±0.10 (.374±.004) +0.05 0.05 –0 +.002 .002 –.0 (Stand off) 24 0.95±0.05(.037±.002) (Mounting height) Details of " ...

Page 58

... MBM29LV160TE/BE (Continued) 48-pin plastic FBGA (BGA-48P-M11) 8.00±0.20(.315±.008) INDEX C0.25(.010) 0.10(.004) 1998 FUJITSU LIMITED B480011S-1C -70/90/12 Note: The actual shape of corners may differ from the dimension. +0.15 +.006 1.05 .041 –0.10 –.004 (Mounting height) 0.38±0.10(.015±.004) (Stand off) 6.00± ...

Page 59

... MBM29LV160TE/BE FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Corporate Global Business Support Division Electronic Devices KAWASAKI PLANT, 4-1-1, Kamikodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa 211-8588, Japan Tel: +81-44-754-3763 Fax: +81-44-754-3329 http://www.fujitsu.co.jp/ North and South America FUJITSU MICROELECTRONICS, INC. 3545 North First Street, ...

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