MBM29LV160TE Fujitsu Microelectronics, Inc., MBM29LV160TE Datasheet - Page 17

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MBM29LV160TE

Manufacturer Part Number
MBM29LV160TE
Description
16m 2m X 8/1m X 16 Bit
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet

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Notes: 1. Address bits A
2. Bus operations are defined in Tables 2 and 3.
3. RA =Address of the memory location to be read.
4. RD =Data read from location RA during read operation.
5. SPA =Sector address to be protected. Set sector address (SA) and (A
6. The system should generate the following address patterns:
7. Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.
*1: This command is valid while Fast Mode.
*2: This command is valid while RESET = V
*3: The valid addresses are A
*4: The data “00H” is also acceptable.
Sector Address (SA).
PA =Address of the memory location to be programmed. Addresses are latched on the falling edge of
SA =Address of the sector to be erased. The combination of A
PD =Data to be programmed at location PA. Data is latched on the rising edge of WE.
SD =Sector protection verify data. Output 01H at protected sector addressed and output 00H at
Word Mode: 555H or 2AAH to addresses A
Byte Mode: AAAH or 555H to addresses A
the WE pulse.
uniquely select any sector.
unprotected sector addresses.
11
to A
19
= X = “H” or “L” for all address commands except or Program Address (PA) and
6
to A
0
. The other addresses are “Don’t care”.
ID
.
MBM29LV160TE/BE
-1
0
to A
to A
10
10
19
, A
18
, A
6
, A
17
, A
1
, A
16
0
, A
) = (0, 1, 0).
15
, A
14
, A
13
, and A
-70/90/12
12
will
17

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