MBM29LV160TE Fujitsu Microelectronics, Inc., MBM29LV160TE Datasheet - Page 24

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MBM29LV160TE

Manufacturer Part Number
MBM29LV160TE
Description
16m 2m X 8/1m X 16 Bit
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet

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24
MBM29LV160TE/BE
Toggle Bit II
Notes: 1. Performing successive read operations from any address will cause DQ
Ready/Busy Pin
Program
Erase
Erase Suspend Read
(Erase Suspended Sector)
(Note 1)
Erase-Suspend Program
• DQ
This Toggle Bit II, along with DQ
Algorithm or in Erase Suspend.
Successive reads from the erasing sector will cause DQ
device is in the erase-suspended-read mode, successive reads from the erase-suspended sector will cause
DQ
address of the non-erase suspended sector will indicate a logic “1” at DQ
DQ
Program operation is in progress.
For example, DQ
(DQ
Furthermore, DQ
mode, DQ
• RY/BY
The MBM29LV160TE/BE provides a RY/BY open-drain output pin as a way to indicate to the host system that
the Embedded Algorithms are either in progress or has been completed. If the output is low, the device is busy
with either a program or erase operation. If the output is high, the device is ready to accept any read/write or
erase operation. When the RY/BY pin is low, the devices will not accept any additional program or erase com-
mands with the exception of the Erase Suspend command. If the MBM29LV160TE/BE is placed in an Erase
Suspend mode, the RY/BY output will be high, by means of connecting with a pull-up resister to V
During programming, the RY/BY pin is driven low after the rising edge of the fourth WE pulse. During an erase
operation, the RY/BY pin is driven low after the rising edge of the sixth WE pulse. The RY/BY pin will indicate a
busy condition during the RESET pulse. See Figures 12 and 13 for a detailed timing diagram. The RY/BY pin
is pulled high in standby mode.
Since this is an open-drain output, RY/BY pins can be tied together in parallel with a pull-up resistor to V
2
6
2
2. Reading the byte address being programmed while in the erase-suspend program mode will indicate
to toggle. When the device is in the erase-suspended-program mode, successive reads from the byte
is different from DQ
toggles while DQ
2
logic “1” at the DQ
toggle.
2
toggles if this bit is read from an erasing sector.
Mode
2
2
and DQ
can also be used to determine which sector is being erased. When the device is in the erase
6
does not.) See also Table 9 and Figure 11.
2
2
6
in that DQ
bit. However, successive reads from the erase-suspended sector will cause DQ
can be used together to determine if the erase-suspend-read mode is in progress.
6
, can be used to determine whether the device is in the Embedded Erase
6
toggles only when the standard program or Erase, or Erase Suspend
Table 9
-70/90/12
DQ
DQ
DQ
0
1
7
7
7
Toggle Bit Status
2
to toggle during the Embedded Erase Algorithm. If the
Toggle (Note 1)
Toggle
Toggle
DQ
1
6
2
.
6
to toggle.
1 (Note 2)
Toggle
Toggle
DQ
1
CC
2
.
CC
.
2
to

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