MBM29DL640E Fujitsu Microelectronics, Inc., MBM29DL640E Datasheet - Page 41

• Manufacturer Part Number: MBM29DL640E
• Description: Flash Memory 64 M 8 M X 8/4 M X 16 Bit Dual Operation
• Manufacturer: Fujitsu Microelectronics, Inc.

2. AC Characteristics
Note : Test Conditions :
Read Cycle Time
Address to Output Delay
Chip Enable to Output Delay
Output Enable to Output Delay
Chip Enable to Output High-Z
Output Enable to Output High-Z
Output Hold Time From Addresses,
CE or OE, Whichever Occurs First
RESET Pin Low to Read Mode
CE to BYTE Switching Low or High
• Read Only Operations Characteristics
Output Load : 1 TTL gate and 30 pF (MBM29DL640E-80)
Input rise and fall times : 5 ns
Input pulse levels : 0.0 V to 3.0 V
Timing measurement reference level
Parameter
Input : 1.5 V
Output : 1.5 V
1 TTL gate and 100 pF (MBM29DL640E-90/120)
Device
Under
Test
JEDEC Standard
C
L
t
t
t
t
t
t
t
GHQZ
AVAV
AVQV
ELQV
GLQV
EHQZ
AXQX
Figure 4 Test Conditions
Symbol
t
READY
t
t
t
t
ELFH
t
t
t
t
t
ELFL
ACC
RC
CE
OE
OH
DF
DF
IN3064
or equivalent
6.2 k
Condition
OE
OE
CE
3.3 V
V
V
V
IL
IL
IL
2.7 k
MBM29DL640E
Min. Max. Min. Max. Min. Max.
80
0
80
Diodes
or equivalent
80
80
30
25
25
20
5
Value (Note)
IN3064
90
0
90
90
90
35
30
30
20
5
120
0
12
120
120
50
30
30
20
5
80/90/12
Unit
ns
ns
ns
ns
ns
ns
ns
ns
s
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