VSKTF200 Vishay Siliconix, VSKTF200 Datasheet - Page 3

• Manufacturer Part Number: VSKTF200
• Description: Fast Thyristor/Diode and Thyristor/Thyristor
• Manufacturer: Vishay Siliconix

www.DataSheet4U.com
Document Number: 94422
Revision: 03-Jun-08
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
Maximum recovery time
Maximum turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
RMS insulation voltage
Maximum peak reverse and off-state
leakage current
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum peak average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Storage temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink per module
Mounting torque ± 10 %
Approximate weight
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK
MAP to heatsink
busbar to MAP
For technical questions, contact: [e-mail]
TM
SYMBOL
SYMBOL
SYMBOL
SYMBOL
R
P
dV/dt
I
R
V
I
-V
P
V
dI/dt
RRM
V
T
thC-hs
DRM
G(AV)
I
I
Power Modules), 200 A
I
GM
T
GT
GD
thJC
INS
t
GM
GD
Stg
t
GT
GT
rr
q
J
,
T
50 Hz, circuit to base, T
T
f = 50 Hz, d% = 50
T
T
T
T
DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to
allow for the spread of the compound. Use of cable
lugs is not recommended, busbar should be used
and restrained during tightening. Threads must be
lubricated with a compound.
Gate drive 20 V, 20 Ω, t
T
I
I
V
TM
TM
J
J
J
J
J
J
J
R
= 125 °C, f = 50 Hz, d% = 50
= 125 °C, t
= 125 °C, exponential to 67 % V
= 125 °C, rated V
= 25 °C, V
= 125 °C, rated V
= 25 °C
= 50 V; dV/dt = 400 V/µs linear to 80 % V
= 750 A; T
= 350 A, dI/dt = - 25 A/µs, V
ak
p
J
TEST CONDITIONS
TEST CONDITIONS
≤ 5 ms
TEST CONDITIONS
TEST CONDITIONS
12 V, Ra = 6
= T
J
DRM
DRM
maximum; dI/dt = - 25 A/µs;
J
r
/V
applied
= 25 °C, t = 1 s
≤ 1 ms, V
RRM
applied
Vishay High Power Products
R
= 50 V, T
D
DRM
= 80 % V
VSK.F200..P Series
J
= 25 °C
DRM
DRM
,
20
- 40 to 125
- 40 to 150
K
VALUES
(35 to 53)
VALUES
VALUES
VALUES
0.125
0.025
4 to 6
1000
3000
0.25
200
17.8
800
500
60
10
10
20
50
5
3
2
www.vishay.com
25
J
(lbf · in)
UNITS
UNITS
UNITS
UNITS
N · m
A/µs
V/µs
K/W
mA
mA
mA
oz.
µs
°C
W
A
V
V
V
V
g
3