VSKTF200 Vishay Siliconix, VSKTF200 Datasheet - Page 5

• Manufacturer Part Number: VSKTF200
• Description: Fast Thyristor/Diode and Thyristor/Thyristor
• Manufacturer: Vishay Siliconix

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Document Number: 94422
Revision: 03-Jun-08
10000
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
7000
6000
5000
4000
3000
1000
8000
7000
6000
5000
4000
3000
Fig. 7 - On-State Voltage Drop Characteristics
Numb er Of Equa l Amplitude Half Cyc le Current Pulses (N)
100
0.01
1
1
VSK.F200.. S eries
Per Junction
VSK.F 200.. S eries
Per Junction
Instantaneous On-state Voltage (V)
Ma ximum Non Rep etitive S urge Current
Of Conduction May Not Be Maintained.
At Any Rated Load Condition And With
Fast Thyristor/Diode and Thyristor/Thyristor
2
Rated V
(MAGN-A-PAK
Versus Pulse T rain Duration. Control
Pulse T rain Duration (s)
3
R RM
No Voltage R eap plied
R ated V
Applied Following S urge.
T = 25°C
T = 125°C
0.1
10
4
J
J
VSK.F200.. Series
Per Junc tion
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initial T = 125°C
Initial T = 125°C
R RM
For technical questions, contact: [e-mail]
5
R eapplied
J
J
TM
6
Power Modules), 200 A
100
1
7
Fig. 10 - Reverse Recovery Current Characteristics
Fig. 9 - Reverse Recovery Charge Characteristics
Fig. 8 - Thermal Impedance Z
0.001
0.01
320
300
280
260
240
220
200
180
160
140
120
100
180
150
120
0.1
80
90
60
30
R ate Of Fall Of Forward Current - di/ dt (A/ µs )
0.001
R ate Of Fall Of Forward Current - di/ dt (A/ µs )
1
Vishay High Power Products
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
S teady S tate Value:
R
(DC Operation)
thJC
S quare Wave Puls e Duration (s)
0.01
VSK.F200..P Series
= 0.125 K/ W
I
T M
I
T M
= 1000 A
= 1000A
0.1
500 A
300 A
200 A
100 A
500A
300A
200A
100A
VSK.F 200.. S eries
Per Junc tion
VSK.F200.. S eries
T = 125°C
VSK.F200.. S eries
T = 125°C
1
J
J
thJC
Characteristics
10
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100
5