VSKTF200 Vishay Siliconix, VSKTF200 Datasheet - Page 4

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VSKTF200

Manufacturer Part Number
VSKTF200
Description
Fast Thyristor/Diode and Thyristor/Thyristor
Manufacturer
Vishay Siliconix
Datasheet
VSK.F200..P Series
Vishay High Power Products
Note
• Table shows the increment of thermal resistance R
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4
ΔR
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CONDUCTIONS ANGLE
thJC
CONDUCTION
130
120
110
100
130
120
110
100
180°
120°
90
80
70
60
90
80
70
60
90°
60°
30°
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
0
0
50
Average On-state Current (A)
Average On-state Current (A)
40
30°
100
VSK.F 200.. S eries
R
30°
80
60°
thJC
VSK.F 200.. S eries
R
thJC
90°
150
60°
(DC) = 0.125 K/ W
120°
120
(DC) = 0.125 K/ W
200
90°
Conduction Period
Conduc tion Angle
180°
SINUSOIDAL CONDUCTION
For technical questions, contact: ind-modules@vishay.com
160
120°
250
DC
180°
200
300
thJC
0.009
0.014
0.020
Fast Thyristor/Diode and Thyristor/Thyristor
350
0.10
0.32
240
(MAGN-A-PAK
when devices operate at different conduction angles than DC
TM
RECTANGULAR CONDUCTION
Power Modules), 200 A
500
450
400
350
300
250
200
150
100
350
300
250
200
150
100
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
50
50
0
0
0
0
RMS Limit
0.006
0.011
0.015
0.020
0.033
50
RMS Limit
Average On-state Current (A)
180°
120°
Average On-state Current (A)
DC
90°
60°
30°
40
180°
120°
90°
60°
30°
100
80
150
VSK.F 200.. S eries
Per Junction
T = 125°C
VSK.F 200.. S eries
Per Junction
T = 125°C
200
Conduc tion Angle
J
J
Conduction Period
120
Document Number: 94422
250
160
Revision: 03-Jun-08
300
UNITS
K/W
200
350

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