VSKTF200 Vishay Siliconix, VSKTF200 Datasheet - Page 6

• Manufacturer Part Number: VSKTF200
• Description: Fast Thyristor/Diode and Thyristor/Thyristor
• Manufacturer: Vishay Siliconix

VSK.F200..P Series
Vishay High Power Products
www.vishay.com
6
www.DataSheet4U.com
1E4
1E3
1E2
1E1
1E4
1E3
1E2
1E4
1E3
1E2
1E1
1E1
1E1
tp
tp
tp
5000
VSK.F200.. S eries
T rapezoid a l pulse
T = 85°C d i/d t 50A/ µs
VSK.F200.. S eries
T rapezoidal pulse
T = 60°C di/ dt 50A/ µs
5000
C
C
5000
VSK.F200.. S eries
S inusoidal pulse
T = 85°C
2500
C
1E 2
1E2
1E2
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Pulse Basewidth (µs)
2500
2500
1000
1000
1000
400
400
400
For technical questions, contact: [e-mail]
150
1E3
1E 3
1E3
150
150
S nubber circ uit
R = 10 ohms
C = 0.47 µF
V = 80% V
S nub ber c irc uit
R = 10 ohms
C = 0.47 µF
V = 80% V
50 Hz
S nubber circ uit
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
D
s
s
D
s
s
D
50 Hz
50 Hz
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK
Fig. 11 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
Fig. 13 - Frequency Characteristics
DRM
DRM
DRM
1E 4
1E 4
1E4
1E 4
1E4
1E4
TM
Power Modules), 200 A
1E1
E1
E1
1E1
1E1
1E1
tp
tp
tp
VSK.F200.. S eries
S inusoidal pulse
T = 60°C
5000
VSK.F200.. S eries
T rapezoidal pulse
T = 60°C di/ dt 100A/ µs
VSK.F200.. Series
T rapezoidal pulse
T = 85°C di/ dt 100A/ µs
C
C
5000
5000
C
2500
1E2
1E2
1E2
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Pulse Basewidth (µs)
2500
2500
1000
1000
1000
400
400
400
150
Document Number: 94422
1E3
1E3
150
1E3
150
S nubber circuit
R = 10 ohms
C = 0.47 µF
V = 80% V
S nubber circ uit
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
D
50 Hz
S nubber circ uit
R = 10 ohms
C = 0.47 µF
V = 80% V
50 Hz
s
s
D
50 Hz
s
s
D
Revision: 03-Jun-08
DRM
DRM
DRM
1E4
1E4
1E4