SPB80N03 Siemens Semiconductor Group, SPB80N03 Datasheet
SPB80N03
Available stocks
Related parts for SPB80N03
SPB80N03 Summary of contents
Page 1
... SIPMOS Power Transistor Features N channel Enhancement mode Avalanche rated rated 175°C operating temperature Type Package SPP80N03 P-TO220-3-1 Q67040-S4734-A2 SPB80N03 P-TO263-3-2 Maximum Ratings °C, unless otherwise specified Parameter Continuous drain current ° 100 °C C Pulsed drain current ° ...
Page 2
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics °C, unless otherwise ...
Page 3
Electrical Characteristics °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance DS(on)max D Input capacitance MHz ...
Page 4
Electrical Characteristics °C, unless otherwise specified Parameter Dynamic Characteristics Gate to source charge Gate to drain charge ...
Page 5
Power Dissipation tot C SPP80N03 320 W 240 200 160 120 100 120 140 160 °C 190 Safe operating area ...
Page 6
Typ. output characteristics parameter µs p SPP80N03 190 P = 300W tot 160 140 120 100 ...
Page 7
Drain-source on-resistance DS(on) j parameter : SPP80N03 0.015 0.012 0.011 0.010 0.009 0.008 98% 0.007 0.006 typ 0.005 0.004 0.003 0.002 0.001 0.000 -60 - ...
Page 8
Avalanche Energy parameter 700 mJ 600 550 500 450 400 350 300 250 200 150 100 100 ...
Page 9
Edition 03 / 1999 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73, 81541 München © Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only ...