SPB80N03 Siemens Semiconductor Group, SPB80N03 Datasheet - Page 4

• Manufacturer Part Number: SPB80N03
• Description: SIPMOS Power Transistor
• Manufacturer: Siemens Semiconductor Group

Reverse Diode
Inverse diode continuous forward current
T
Inverse diode direct current,pulsed
T
Inverse diode forward voltage
V
Reverse recovery time
V
Reverse recovery charge
V
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Gate to source charge
V
Gate to drain charge
V
Gate charge total
V
Gate plateau voltage
V
Semiconductor Group
C
C
GS
R
R
DD
DD
DD
DD
= 25 °C
= 25 °C
= 15 V, I
= 15 V, I
= 0 V, I
= 24 V, I
= 24 V, I
= 24 V, I
= 24 V, I
F
F =
F
= I
D
D
D
D
= 160 A
l
S
S
= 80 A
= 80 A
= 80 A, V
= 80 A
, d i
, d i
F
F
/d t = 100 A/µs
/d t = 100 A/µs
GS
= 0 to 10 V
4
I
I
V
t
Q
Symbol
Q
Q
Q
V
S
SM
rr
SD
(plateau)
rr
gs
gd
g
min.
-
-
-
-
-
-
-
-
-
Values
0.06
typ.
112
1.1
60
4.7
20
51
-
-
SPP80N03
max.
0.09
76.5
320
175
1.7
80
90
30
-
A
V
ns
µC
Unit
nC
V