SPB80N03 Siemens Semiconductor Group, SPB80N03 Datasheet - Page 2

• Manufacturer Part Number: SPB80N03
• Description: SIPMOS Power Transistor
• Manufacturer: Siemens Semiconductor Group

1 current limited by bond wire
2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-Source on-state resistance
V
Semiconductor Group
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
connection. PCB is vertical without blown air.
GS
DS
DS
GS
GS
= 240 µA
= 30 V, V
= 30 V, V
= 0 V, I
= 20 V, V
= 10 V, I
2
cooling area
D
D
= 0.25 mA, T
GS
GS
DS
= 80 A
= 0 V, T
= 0 V, T
= 0 V
2)
GS
j
j
= 25 °C
= 150 °C
j
= 25 °C
= V
DS
2
Symbol
V
V
I
I
R
Symbol
R
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
thJC
thJA
thJA
min.
min.
2.1
30
-
-
-
-
-
-
-
Values
Values
0.0038 0.006
typ.
typ.
0.1
10
3
-
-
-
-
-
-
SPP80N03
max.
max.
100
100
0.5
62
40
62
1
4
-
Unit
V
µA
nA
Unit
K/W