SPB80N03 Siemens Semiconductor Group, SPB80N03 Datasheet - Page 5

• Manufacturer Part Number: SPB80N03
• Description: SIPMOS Power Transistor
• Manufacturer: Siemens Semiconductor Group

Power Dissipation
P
Safe operating area
I
parameter : D = 0 , T
Semiconductor Group
D
tot
= f ( V
= f ( T
10
10
10
320
240
200
160
120
W
80
40
A
0
3
2
1
10
0
SPP80N03
SPP80N03
DS
-1
C
20
)
)
40
60
10
0
80 100 120 140 160 °C 190
C
= 25 °C
10
1
DC
t p = 54.0µs
V
100 µs
1 ms
10 ms
T
V
C
DS
10
2
5
Drain current
I
parameter: V
Transient thermal impedance
Z
parameter : D = t
D
thJC
K/W
= f ( T
10
10
10
10
10
10
10
90
70
60
50
40
30
20
10
A
= f ( t
-1
-2
-3
-4
-5
0
1
0
10
0
C
SPP80N03
SPP80N03
-7
)
20
p
10
)
single pulse
GS
-6
40
10
p
60
/ T
10 V
-5
80 100 120 140 160 °C 190
10
-4
10
-3
SPP80N03
10
-2
D = 0.50
0.20
0.10
0.05
0.02
0.01
T
t
s
p
C
10
0