TC2996D Transcom, TC2996D Datasheet
TC2996D
Manufacturer Part Number
TC2996D
Description
2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs
Manufacturer
Transcom
Datasheet
1.TC2996D.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TC2996D
Manufacturer:
SYNERGY
Quantity:
5 000
FEATURES
DESCRIPTION
ELECTRICAL SPECIFICATIONS ( V
* P
TRANSCOM, INC., 90 Dasoong 7
Web-Site: www.transcominc.com.tw
www.DataSheet4U.com
The TC2996D is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power
transistor with input prematched circuits. The flange ceramic package provides the best thermal
conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality.
Typical applications include high dynamic range power amplifier for commercial applications.
Symbol
SCL
BV
12 W Typical Power at 2.45 GHz
11 dB Typical Linear Power Gain at 2.45 GHz
High Linearity: IP3 = 50 dBm Typical
High Power Added Efficiency: Nominal PAE of 40 %
Suitable for High Reliability Application
Wg = 30 mm
100 % DC and RF Tested
Flange Ceramic Package
PAE
P
I
IP3
R
G
V
g
DSS
1dB
: Output Power of Single Carrier Level.
m
DGO
th
L
P
Output Power at 1dB Gain Compression Point
Linear Power Gain
Intercept Point of the 3
Power Added Efficiency at 1dB Compression Power
Saturated Drain-Source Current at V
Transconductance at V
Pinch-off Voltage at V
Drain-Gate Breakdown Voltage at I
Thermal Resistance
2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs
DS
rd
DS
-order Intermodulation, *P
= 2 V, I
= 2 V, V
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
D
CONDITIONS
GS
= 60 mA
DGO
DS
= 0 V
= 2 V, V
=15 mA
DS
Phone: 886-6-5050086
= 10.5V, I
GS
= 0 V
SCL
= 28 dBm
P 1 / 3
DS
= 2.5A @ 2.45 GHz )
PHOTO ENLARGEMENT
Fax: 886-6-5051602
MIN
39.5
10
20
TYP
5400
-1.7
7.5
1.5
41
11
50
40
22
MAX
TC2996D
REV2_20070503
UNIT
Volts
Volts
dBm
dBm
C/W
mS
dB
%
A
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TC2996D Summary of contents
Page 1
... Flange Ceramic Package DESCRIPTION The TC2996D is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. ...
Page 2
... I DSS 35dBm testing. The static discharge must be less than 300V 175 +175 C C Gate Drain Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Phone: 886-6-5050086 TC2996D REV2_20070503 Source Fax: 886-6-5051602 ...
Page 3
... Murata (0603) 1000PF ±10% Murata (0603) 0.1μF ±20% Murata (1206) 10μF ±20% Murata (0603) 2.5PF ± 0.25PF Murata (0603) 1.2PF ± 0.25PF Murata Phone: 886-6-5050086 TC2996D REV2_20070503 Co6, 10uF +10.5 V 1206 Vd Co5, 0.1uF Co4, 1000pF Co2, 2.5pF RF out Co3, 1.2pF Co1, 1.5pF Chip Resistor(0805)10Ω ...