TC2997A Transcom, TC2997A Datasheet
TC2997A
Manufacturer Part Number
TC2997A
Description
GaAs Power FETs
Manufacturer
Transcom
Datasheet
1.TC2997A.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TC2997A
Manufacturer:
Transcom
Quantity:
5 000
FEATURES
DESCRIPTION
ELECTRICAL SPECIFICATIONS ( V
* P
TRANSCOM, INC., 90 Dasoong 7
Web-Site: www.transcominc.com.tw
Preliminary
The TC2997A is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor
with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the
GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include
high dynamic range power amplifiers for commercial applications.
Symbol
SCL
BV
20 W Typical Power at 1.6 GHz
13 dB Typical Linear Power Gain at 1.6 GHz
High Linearity: IP3 = 52 dBm Typical
High Power Added Efficiency: Nominal PAE of 40 %
Suitable for High Reliability Application
Wg = 50 mm
100 % DC and RF Tested
Flange Ceramic Package
PAE
P
I
IP3
R
G
V
g
DSS
1dB
: Output Power of Single Carrier Level.
m
DGO
th
L
P
Output Power at 1dB Gain Compression Point
Linear Power Gain
Intercept Point of the 3
Power Added Efficiency at 1dB Compression Power
Saturated Drain-Source Current at V
Transconductance at V
Pinch-off Voltage at V
Drain-Gate Breakdown Voltage at I
Thermal Resistance
1.6 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
DS
rd
DS
-order Intermodulation*P
= 2 V, I
= 2 V, V
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
D
CONDITIONS
GS
= 60 mA
DGO
DS
= 0 V
= 2 V, V
=15 mA
DS
Phone: 886-6-5050086
= 10.5, I
GS
SCL
= 0 V
= 32 dBm
P 1 / 2
DS
= 5A @ 1.6GHz )
PHOTO ENLARGEMENT
Fax: 886-6-5051602
MIN
42
12
20
TYP
9000
12.5
-1.7
0.9
43
13
52
40
22
MAX
TC2997A
PRE4_20050708
UNIT
Volts
Volts
dBm
dBm
C/W
mS
dB
%
A
Related parts for TC2997A
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
PHEMT GaAs Power FETs
Manufacturer:
Transcom
Datasheet:
Part Number:
Description:
0.5 W Low-Cost Packaged PHEMT GaAs Power FETs
Manufacturer:
TRANSCOM [Transcom, Inc.]
Datasheet:
Part Number:
Description:
0.5 W Flange Ceramic Packaged PHEMT GaAs Power FETs
Manufacturer:
TRANSCOM [Transcom, Inc.]
Datasheet:
Part Number:
Description:
5 W Low-Cost Packaged PHEMT GaAs Power FETs
Manufacturer:
TRANSCOM [Transcom, Inc.]
Datasheet:
Part Number:
Description:
9.2 - 10.2 GHz 39 dBm MMIC
Manufacturer:
TRANSCOM [Transcom, Inc.]
Datasheet:
Part Number:
Description:
30 - 36 GHz 24dBm MMIC
Manufacturer:
TRANSCOM [Transcom, Inc.]
Datasheet:
Part Number:
Description:
30 - 36 GHz 29dBm MMIC
Manufacturer:
TRANSCOM [Transcom, Inc.]
Datasheet:
Part Number:
Description:
Low Noise and High Dynamic Range Packaged GaAs FETs
Manufacturer:
Transcom
Datasheet:
Part Number:
Description:
Low Noise Ceramic Packaged PHEMT GaAs FETs
Manufacturer:
Transcom
Datasheet:
Part Number:
Description:
2 W Flange Ceramic Packaged PHEMT GaAs Power FETs
Manufacturer:
Transcom
Datasheet:
Part Number:
Description:
5 W Flange Ceramic Packaged GaAs Power FETs
Manufacturer:
TRANSCOM
Datasheet:
Part Number:
Description:
GaAs Power FETs
Manufacturer:
Transcom
Datasheet:
Part Number:
Description:
GaAs Power FETs
Manufacturer:
Transcom
Datasheet:
Part Number:
Description:
2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs
Manufacturer:
Transcom
Datasheet:
Part Number:
Description:
GaAs Power FETs
Manufacturer:
Transcom
Datasheet:
TC2997A Summary of contents
Page 1
... Flange Ceramic Package DESCRIPTION The TC2997A is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial applications ...
Page 2
... I DSS 37 dBm testing. The static discharge must be less than 300V. 100 W 175 +175 C C Gate Drain Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Phone: 886-6-5050086 TC2997A PRE4_20050708 Source Fax: 886-6-5051602 ...