TC2997B Transcom, TC2997B Datasheet

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TC2997B

Manufacturer Part Number
TC2997B
Description
GaAs Power FETs
Manufacturer
Transcom
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TC2997B
Manufacturer:
Transcom
Quantity:
5 000
FEATURES
DESCRIPTION
ELECTRICAL SPECIFICATIONS ( @ 1.9 GHz )
* P
TRANSCOM, INC., 90 Dasoong 7
Web-Site: www.transcominc.com.tw
The TC2997B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor
with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the
GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications
include high dynamic range power amplifier for commercials applications.
Symbol
SCL
BV
20W Typical Power at 1.9 GHz
12 dB Typical Linear Power Gain at 1.9 GHz
High Linearity: IP3 = 52 dBm Typical
High Power Added Efficiency: Nominal PAE of 40 %
Suitable for High Reliability Application
Lg = 1 m, Wg = 50 mm
100 % DC and RF Tested
Flange Ceramic Package
PAE
P
I
IP3
R
G
V
g
DSS
1dB
: Output Power of Single Carrier Level.
m
DGO
th
L
P
Output Power at 1dB Gain Compression Point V
Linear Power Gain V
Intercept Point of the 3
Power Added Efficiency at 1dB Compression Power
Saturated Drain-Source Current at V
Transconductance at V
Pinch-off Voltage at V
Drain-Gate Breakdown Voltage at I
Thermal Resistance
1.9 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
DS
DS
rd
DS
-order Intermodulation V
= 10.5 V, I
= 2 V, I
= 2 V, V
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
D
GS
= 60 mA
DS
DGO
DS
= 0 V
CONDITIONS
= 5A
= 2 V, V
=15 mA
Phone: 886-6-5050086
GS
DS
DS
= 0 V
= 10.5 V, I
= 10.5 V, I
P 1 / 3
DS
DS
= 5A
= 5A, *P
SCL
= 32 dBm
PHOTO ENLARGEMENT
Fax: 886-6-5051602
MIN
42
11
20
TYP
9000
12.5
-1.7
0.9
43
12
52
40
22
TC2997B
MAX
REV0_20040412
UNIT
Volts
Volts
dBm
dBm
C/W
mS
dB
%
A

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TC2997B Summary of contents

Page 1

... Flange Ceramic Package DESCRIPTION The TC2997B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifier for commercials applications ...

Page 2

... Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Phone: 886-6-5050086 Source ( S12 S22 MAG ANG MAG -11.953 0.83047 -80.437 0.96855 -127.56 0.98934 -127.53 0.98926 -127.40 0.99039 -128.39 0.99112 Fax: 886-6-5051602 TC2997B REV0_20040412 ANG -171.23 -173.25 176.29 171.49 167.26 163.24 ...

Page 3

... Murata 1.5 pF 0603 Murata 1000 pF 0603 Murata 10 uF 1206 Murata 2.2 pF 1212 Temex 1.5 pF 1212 Temex 1000 pF 0603 Murata 0.1 uF 0603 Murata 10 uF 1206 Murata Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Phone: 886-6-5050086 TC2997B REV0_20040412 Fax: 886-6-5051602 ...

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