RC28F256 Intel Corporation, RC28F256 Datasheet - Page 48

• Manufacturer Part Number: RC28F256
• Description: Intel StrataFlash Embedded Memory
• Manufacturer: Intel Corporation

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1-Gbit P30 Family
9.0
9.1
Table 19.
9.1.1
April 2005
48
Read
Write
Output Disable
Standby
Reset
Notes:
1.
2.
3.
Bus Operation
Asynchronous
Synchronous
Refer to the
X = Don’t Care (H or L).
RST# must be at V
Bus Operations Summary
Device Operations
This section provides an overview of device operations. The system CPU provides control of all in-
system read, write, and erase operations of the device via the system bus. The on-chip Write State
Machine (WSM) manages all block-erase and word-program algorithms.
Device commands are written to the Command User Interface (CUI) to control all flash memory
device operations. The CUI does not occupy an addressable memory location; it is the mechanism
through which the flash device is controlled.
Bus Operations
CE# low and RST# high enable device read operations. The device internally decodes upper
address inputs to determine the accessed block. ADV# low opens the internal address latches. OE#
low activates the outputs and gates selected data onto the I/O bus.
In asynchronous mode, the address is latched when ADV# goes high or continuously flows through
if ADV# is held low. In synchronous mode, the address is latched by the first of either the rising
ADV# edge or the next valid CLK edge with ADV# low (WE# and RST# must be V
be V
Bus cycles to/from the P30 device conform to standard microprocessor bus operations.
summarizes the bus operations and the logic levels that must be applied to the device control signal
inputs.
Reads
To perform a read operation, RST# and WE# must be deasserted while CE# and OE# are asserted.
CE# is the device-select control. When asserted, it enables the flash memory device. OE# is the
data-output control. When asserted, the addressed flash memory data is driven onto the I/O bus.
See
Section 14.0, “Special Read States” on page 75
Table 20, “Command Bus Cycles” on page 50
Section 10.0, “Read Operations” on page 53
IL
).
RST#
SS
V
V
V
V
V
V
IH
IH
IH
IH
IH
IL
± 0.2 V to meet the maximum specified power-down current.
Intel StrataFlash
Running
CLK
Order Number: 306666, Revision: 001
X
X
X
X
X
ADV#
X
X
X
L
L
L
®
Embedded Memory (P30)
CE#
H
X
L
L
L
L
for valid DQ[15:0] during a write operation.
for details regarding the available read states.
OE#
for details on the available read modes, and see
H
H
X
X
L
L
WE#
H
H
H
X
X
L
Deasserted
High-Z
High-Z
High-Z
High-Z
Driven
WAIT
DQ[15:0]
Output
Output
High-Z
High-Z
High-Z
Input
IH
; CE# must
Datasheet
Table 19
Notes
2,3
1
2
2