BCR8PM-16 Mitsubishi Electronics America, Inc., BCR8PM-16 Datasheet - Page 5

• Manufacturer Part Number: BCR8PM-16
• Manufacturer: Mitsubishi Electronics America, Inc.

GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
TEST PROCEDURE 1
TEST PROCEDURE 3
6V
6V
6Ω
6Ω
160
140
120
100
10
10
10
80
60
40
20
0
7
5
4
3
2
7
5
4
3
2
–60
2
1
0
10
COMMUTATION CHARACTERISTICS
TYPICAL
EXAMPLE
T
I
τ = 500µs
V
f = 3Hz
0
MINIMUM
CHARAC-
TERISTICS
VALUE
T
COMMUTATING CURRENT (A/ms)
–40
j
D
JUNCTION TEMPERATURE (°C)
RATE OF DECAY OF ON-STATE
= 125°C
= 4A
V
V
= 200V
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
2 3
–20
A
A
0
4
I QUADRANT
R
R
5 7 10
G
G
20
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
TYPICAL EXAMPLE
TEST PROCEDURE 2
40
6V
6Ω
(dv/dt)c
1
60
2 3
80
III QUADRANT
V
100
4 5 7 10
(di/dt)c
A
120
TIME
TIME
TIME
V
D
140
R
G
2
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
INSULATED TYPE, PLANAR PASSIVATION TYPE
160
140
120
100
10
10
10
80
60
40
20
0
7
5
4
3
2
7
5
4
3
2
10
3
2
1
10
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
GATE CURRENT PULSE WIDTH (µs)
1
0
GATE CURRENT PULSE WIDTH
2 3
I
GATE TRIGGER CURRENT VS.
FGT I
BREAKOVER VOLTAGE VS.
2 3
45
OFF-STATE VOLTAGE
7 10
I
RATE OF RISE OF
RGT I
4
5 7 10
2
2 3
I
TYPICAL EXAMPLE
TYPICAL EXAMPLE
RGT III
45
1
MEDIUM POWER USE
7 10
I QUADRANT
III QUADRANT
2 3
BCR8PM-16
T
3
j
= 125°C
2 3 45
4
5 7 10
7 10
2
4
Mar. 2002