BCR8PM Mitsubishi Electronics America, Inc., BCR8PM Datasheet
BCR8PM
Available stocks
Related parts for BCR8PM
BCR8PM Summary of contents
Page 1
... Commercial frequency, sine full wave 360 conduction, T 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value T = minute, T · T · G terminal to case BCR8PM MEDIUM POWER USE Dimensions in mm 10.5 MAX 2.8 5.2 3.2 0.2 1.3 MAX 0.8 2.54 2.54 ...
Page 2
... Junction to case 4 T =125 C j Commutating voltage and current waveforms 100 125 2.6 3.0 3.4 3.8 MITSUBISHI SEMICONDUCTOR TRIAC BCR8PM MEDIUM POWER USE Limits Min. Typ. Max. — — 2.0 — — 1.5 — — 1.5 — — 1.5 — — 1.5 — — 20 — ...
Page 3
... NO FINS MITSUBISHI SEMICONDUCTOR TRIAC BCR8PM MEDIUM POWER USE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 3 TYPICAL EXAMPLE I RGT III RGT I FGT I 1 –40 – 100 120 ...
Page 4
... MITSUBISHI SEMICONDUCTOR TRIAC BCR8PM MEDIUM POWER USE VS. RMS ON-STATE CURRENT ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 120 120 t2.3 100 100 t2 t2.3 NATURAL CONVECTION CURVES APPLY RESISTIVE, REGARDLESS INDUCTIVE OF CONDUCTION LOADS ...
Page 5
... 3Hz 10 I QUADRANT TEST PROCEDURE 2 MITSUBISHI SEMICONDUCTOR TRIAC BCR8PM MEDIUM POWER USE BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE TYPICAL EXAMPLE T = 125 C j III QUADRANT I QUADRANT ...
Page 6
... Commercial frequency, sine full wave 360 conduction, T 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value T = minute, T · T · G terminal to case BCR8PM MEDIUM POWER USE Dimensions in mm 10.5 MAX 2.8 5.2 3.2 0.2 1.3 MAX 0.8 2.54 2.54 ...
Page 7
... D DRM 3 Junction to case 4 T =125 C/150 C j 100 150 2.5 3.0 3.5 4.0 MITSUBISHI SEMICONDUCTOR TRIAC BCR8PM MEDIUM POWER USE Limits Min. Typ. Max. — — 2.0 — — 1.5 — — 1.5 — — 1.5 — — 1.5 — — 20 — — 20 — ...
Page 8
... NO FINS MITSUBISHI SEMICONDUCTOR TRIAC BCR8PM MEDIUM POWER USE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 3 TYPICAL EXAMPLE RGT III RGT I FGT –60 – ...
Page 9
... MITSUBISHI SEMICONDUCTOR TRIAC BCR8PM MEDIUM POWER USE ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 120 120 t2.3 100 100 t2 t2.3 NATURAL CONVECTION CURVES APPLY RESISTIVE, REGARDLESS INDUCTIVE OF CONDUCTION ...
Page 10
... T = 500 200V 3Hz 10 MINIMUM CHARAC- TERISTICS VALUE MITSUBISHI SEMICONDUCTOR TRIAC BCR8PM MEDIUM POWER USE BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (T = 125 C) j TYPICAL EXAMPLE T = 125 C j III QUADRANT I QUADRANT ...
Page 11
... TEST PROCEDURE 1 TEST PROCEDURE TEST PROCEDURE 3 MITSUBISHI SEMICONDUCTOR TRIAC INSULATED TYPE, PLANAR PASSIVATION TYPE RECOMMENDED CIRCUIT VALUES AROUND THE TRIAC LOAD 0.1~0. 47~100 1 BCR8PM MEDIUM POWER USE 0 100 0 Mar. 2002 ...