MT28C3212P2 Micron Semiconductor Products, Inc., MT28C3212P2 Datasheet

MT28C3212P2

Manufacturer Part Number

MT28C3212P2

Description

2 Meg X 16 Page Flash, 128K X 16 SRAM Combo Memory, 66-ball Fbga

Manufacturer

Micron Semiconductor Products, Inc.

Datasheet

1.MT28C3212P2.pdf (47 pages)

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Price

Company:

Euro Chip Distribution

Part Number:

MT28C3212P2FL-11TET

Quantity:

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MT28C3212P2NFL11TET

Manufacturer:

MICRON

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FLASH AND SRAM

COMBO MEMORY

FEATURES

• Flexible dual-bank architecture

• Support for true concurrent operations with no

• Organization: 2,048K x 16 (Flash)

• Basic configuration:

• F_V

• Asynchronous access time

• Page Mode read access

• Low power consumption

• Enhanced suspend options

• Read/Write SRAM during program/erase of Flash

• Dual 64-bit chip protection registers for security

• PROGRAM/ERASE cycles

2 Meg x 16 Page Flash 128K x 16 SRAM Combo Memory

MT28C3212P2FL_2.p65 – Rev. 2, Pub. 4/02

latency:

Flash

SRAM

Read bank b during program bank a and vice versa

Read bank b during erase bank a and vice versa

Bank a (4Mb Flash for data storage)

– Eight 4K-word parameter blocks

– Seven 32K-word blocks

Bank b (28Mb Flash for program storage)

– Fifty-six 32K-word main blocks

2Mb SRAM for data storage

– 128K-words

1.65V (MIN)/1.95V (MAX) F_V

1.65V (MIN)/1.95V (MAX) S_V

1.65V (MIN)/1.95V (MAX) V

1.80V (TYP) F_V

0.0V (MIN)/2.20V (MAX) F_V

12V ±5% (HV) F_V

Flash access time: 100ns or 110ns @ 1.65V F_V

SRAM access time: 100ns @ 1.65V S_V

Interpage read access: 100ns/110ns @ 1.65V F_V

Intrapage read access: 35ns/45ns @ 1.65V F_V

ERASE-SUSPEND-to-READ within same bank

PROGRAM-SUSPEND-to-READ within same bank

ERASE-SUSPEND-to-PROGRAM within same bank

purposes

100,000 WRITE/ERASE cycles per block

1.80V (MIN)/2.20V (MAX) F_V

1.80V (MIN)/2.20V (MAX) S_V

1.80V (MIN)/2.20V (MAX) V

PROGRAM/ERASE)

compatibility)

, V

Q, F_V

PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.

128K x 16 (SRAM)

, S_V

(in-system PROGRAM/ERASE)

(production programming

voltages

Q or

(in-system

read voltage or

read voltage

128K x 16 SRAM COMBO MEMORY

MT28C3212P2FL

MT28C3212P2NFL

Low Voltage, Extended Temperature

• Cross-compatible command set support

NOTE: 1. These specifications are guaranteed for operation

OPTIONS

• Timing

• Boot Block

• V

• Operating Temperature Range

• Package

100ns

110ns

Top

Bottom

0.9V–2.2V

0.0V–2.2V

Commercial Temperature (0

Extended Temperature (-40

66-ball FBGA (8 x 8 grid)

Extended command set

Common Flash interface (CFI) compliant

Range

2. MT28C3212P2NFL only.

within either one of two voltage ranges, 1.65V–1.95V

or 1.80V–2.20V. Use only one of the two voltage

ranges for PROGRAM and ERASE operations.

66-Ball FBGA (Top View)

2 MEG x 16 PAGE FLASH

MT28C3212P2FL-10 TET

F_WE#

F_WP#

S_LB#

F_V

S_V

A20

A16

A18

BALL ASSIGNMENT

S_UB#

F_RP#

F_V

A11

A17

Part Number Example:

S_OE#

A15

A10

A19

(Ball Down)

DQ11

A14

Top View

DQ15

DQ13

DQ12

F_CE#

DQ9

A13

C to +85

C to +70

S_WE#

S_CE2

DQ10

F_V

A12

DQ6

DQ8

S_V

F_OE#

F_V

DQ14

DQ4

DQ2

DQ0

S_CE1#

F_V

MARKING

DQ7

DQ5

DQ3

DQ1

C) None

None

-10

-11

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