T15V8M16A TM tech, T15V8M16A Datasheet - Page 9

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T15V8M16A

Manufacturer Part Number
T15V8M16A
Description
512K X 16 LOW POWER CMOS STATIC RAM
Manufacturer
TM tech
Datasheet
tm
WRITE CYCLE 3 ( UB , LB Controlled)
NOTES ( WRITE CYCLE ) :
Taiwan Memory Technology, Inc. reserves the right
to change products or specifications without notice.
A d d r e s s
U B / L B
D O U T
C E
1. A write occurs during the overlap of a low CE , a low WE . A write begins at the lateat transition
2.
3.
4.
W E
D I N
among
high, WE going high.
t
t
t
CW
AS
W R
CH
TE
is measured from the address valid to the beginning of write.
is measured from the later of
is measured from the end of write to the address change.
CE
goes low, WE going low. A write end at the earliest transition among
H i g h - Z
H i g h - Z
t
W P
t AS
is measured from the beginning of write to the end of write.
CE
t
AW
going low to the end of write.
t
CW
t
W C
t WP
P. 9
t DW
Preliminary T15V8M16A
t DH
t
WR
Publication Date: JAN. 2000
H i g h - Z
DO N 'T C AR E
UN D EF INE D
Revision:0.A
CE
going

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