MT28C3224P20 Micron Technology, MT28C3224P20 Datasheet - Page 38

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MT28C3224P20

Manufacturer Part Number
MT28C3224P20
Description
FLASH AND SRAM COMBO MEMORY
Manufacturer
Micron Technology
Datasheet
READ TIMING PARAMETERS
2 Meg x 16 Page Flash 256K x 16 SRAM Combo Memory
MT28C3224P20_3.p65 – Rev. 3, Pub. 7/02
SYMBOL
t
t
t
t
t
t
RC
AA
CO
OE
LB,
LZ
t
UB
V
CC
MIN
S_LB#, S_UB#
0
= 1.70V–1.90V V
DATA-OUT
ADDRESS
S_CE1#
MAX
S_OE#
S_CE2
100
100
100
100
35
DATA-OUT
-80/-85
ADDRESS
(S_CE1# = S_OE# = V
CC
MIN
0
= 1.80V–2.20V
High-Z
MAX
85
85
85
35
85
PREVIOUS
DATA VALID
t LBLZ, t UBLZ
t OH
READ CYCLE 1
READ CYCLE 2
UNITS
(S_WE# = V
t OLZ
ns
ns
ns
ns
ns
ns
t LZ(2)
38
IL
256K x 16 SRAM COMBO MEMORY
t AA
; S_CE2, S_WE# = V
t CO
t LB, t UB
t OE
SYMBOL
t
t
t
t
t
OLZ
HZ
OHZ
LBHZ,
OH
IH
t RC
t AA
t RC
t LBHZ, t UBHZ
)
t
UBHZ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DATA VALID
2 MEG x 16 PAGE FLASH
DATA VALID
V
CC
MIN
0
0
0
0
5
= 1.70V–1.90V V
IH
t HZ (1, 2)
t OHZ (1)
)
DON’T CARE
MAX
15
15
15
-80/-85
CC
MIN
0
0
0
0
5
= 1.80V–2.20V
©2002, Micron Technology, Inc.
ADVANCE
MAX
15
15
15
UNITS
ns
ns
ns
ns
ns

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