MT28C3224P20 Micron Technology, MT28C3224P20 Datasheet - Page 6
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MT28C3224P20
Manufacturer Part Number
MT28C3224P20
Description
FLASH AND SRAM COMBO MEMORY
Manufacturer
Micron Technology
Datasheet
1.MT28C3224P20.pdf
(42 pages)
- Current page: 6 of 42
- Download datasheet (499Kb)
BALL DESCRIPTIONS (continued)
2 Meg x 16 Page Flash 256K x 16 SRAM Combo Memory
MT28C3224P20_3.p65 – Rev. 3, Pub. 7/02
66-BALL FBGA
H2, H10, H11,
A1, A2, A11,
A12, C4, H1,
NUMBERS
D10, H3
A9, H8
A10
H12
D9
D3
E4
SYMBOL
F_V
F_V
F_V
S_V
S_V
V
NC
CC
Q
CC
CC
PP
SS
SS
Supply
Supply
Supply
Supply
Supply
Supply
Input/
TYPE
–
Flash Program/Erase Power Supply: [0.9V–2.2V or 11.4V–12.6V].
Operates as input at logic levels to control complete device protection.
Provides backward compatibility for factory programming when driven
to 11.4V–12.6V. A lower F_V
Contact factory for more information.
Flash Power Supply: [1.70V–1.90V or 1.80V–2.20V]. Supplies power for
device operation.
Flash Specific Ground: Do not float any ground pin.
SRAM Power Supply: [1.70V–1.90V or 1.80V–2.20V]. Supplies power for
device operation.
SRAM Specific Ground: Do not float any ground pin.
I/O Power Supply: [1.70–1.90V or 1.80V–2.20V].
No Connect: Lead is not internally connected; it may be driven or
floated.
256K x 16 SRAM COMBO MEMORY
6
PP
DESCRIPTION
Micron Technology, Inc., reserves the right to change products or specifications without notice.
voltage range (0.0V–2.2V) is available.
2 MEG x 16 PAGE FLASH
©2002, Micron Technology, Inc.
ADVANCE
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