T4312816A Taiwan Memory Technology, T4312816A Datasheet

no-image

T4312816A

Manufacturer Part Number
T4312816A
Description
8M x 16 SDRAM
Manufacturer
Taiwan Memory Technology
Datasheet
T4312816A-6S
T4312816A-7S
T4312816A-7.5S
T4312816A-8S
T4312816A-10S
tm
SDRAM
FEATURES
ORDERING INFORMATION
TM Technology Inc. reserves the right
to change products or specifications without notice.
Operating temperature : 0 ~ +70 C
PART NO.
64ms refresh period (4K cycle)
MRS cycle with address key programs
Available package type in 54 pin TSOP(II)
- CAS Latency ( 2 & 3 )
3.3V power supply
Four banks operation
LVTTL compatible with multiplexed address
All inputs are sampled at the positive going
edge of system clock
Burst Read Single-bit Write operation
DQM for masking
Auto refresh and self refresh
- Burst Length ( 1 , 2 , 4 , 8 & full page)
- Burst Type (Sequential & Interleave)
CH
TE
FREQUENCY
166 MHz
143 MHz
133 MHz
125 MHz
100 MHz
MAX
TEMPERATURE
0 ~ +70 C
0 ~ +70 C
0 ~ +70 C
0 ~ +70 C
0 ~ +70 C
P. 1
GRNERAL DESCRIPTION
synchronous high data rate Dynamic RAM
organized as 4 x 2,097,152 words by 16 bits,
fabricated
technology .
with the use of system clock I/O transactions are
possible on every clockcycle . Range of operating
frequencies , programmable burst length and
programmable latencies allow the same device to
be useful for a variety of high bandwidth , high
performance memory system applications.
PIN ARRANGEMENT (Top View)
A 1 0 / A P
L D Q M
V
V
C A S
V
V
R A S
D Q 0
D Q 1
D Q 2
D Q 3
D Q 4
D Q 5
D Q 6
D Q 7
B A 0
B A 1
V
V
V
Synchronous design allows precise cycle control
D D Q
D D Q
W E
2M x 16bit x 4Banks Synchronous DRAM
S S Q
S S Q
C S
A 0
A 1
A 2
A 3
D D
D D
D D
The T4312816A is 134,217,728 bits
1
2 6
2 7
2
3
4
5
6
7
8
9
1 0
1 1
1 2
1 3
1 4
1 5
1 6
1 7
1 8
1 9
2 0
2 1
2 2
2 3
2 4
2 5
Preliminary T4312816A
with
( 0 . 8 m m P I N P I T C H )
( 4 0 0 m i l x 8 7 5 m i l )
5 4 P I N T S O P ( I I )
8M x 16 SDRAM
high
Publication Date: APR. 2003
performance
5 4
5 1
5 0
4 9
4 8
4 7
4 6
4 5
4 4
4 3
4 2
4 1
4 0
3 9
3 8
3 7
3 6
3 5
3 4
3 3
3 2
3 1
3 0
2 9
2 8
5 3
5 2
Revision: 0.B
V s s
D Q 1 5
V
D Q 1 4
D Q 1 3
V
D Q 1 2
V
D Q 1
0
D Q 9
V
D Q 8
V s s
N . C / R F U
U D Q M
C L K
C K E
N . C
A 1 1
A 9
A 8
A 7
A 6
A 5
A 4
V s s
D Q 1 1
S S Q
D D Q
S S Q
D D Q
CMOS

Related parts for T4312816A

T4312816A Summary of contents

Page 1

... Preliminary T4312816A SDRAM The T4312816A is 134,217,728 bits with high performance ...

Page 2

... TM Technology Inc. reserves the right to change products or specifications without notice. D ata Input R egister olum n D ecoder Latency & Burst Length Program m ing R egister Tim ing Register Preliminary T4312816A W E L(U)D QM Publication Date: APR. 2003 Revision: 0 ...

Page 3

... N.C/RFU Connection/Reserved for Future Use TM Technology Inc. reserves the right to change products or specifications without notice. Preliminary T4312816A INPUT FUNCTION Active on the positive going edge to sample all input. Disables or enables device operation by masking or enabling all input except CLK,CKE and L(U)DQM Masks system clock to freeze operation from the next clock cycle. ...

Page 4

... 0.3V , all other pin are not under test = 0V OUT DD . Symbol C CLK C ADD C OUT Preliminary T4312816A Value -1.0 to 4.6 -1 +70 -55 to +150 Typ Max. Unit 3.3 3.6 V 3.0 V + 1.5 uA Min Max 2 ...

Page 5

... P. 5 Preliminary T4312816A Test Condition Burst Length = (min) , (min), CKE V (max), =15ns ...

Page 6

... TM Technology Inc. reserves the right to change products or specifications without notice Value 2.4 / 0.4 1 1.4 See Fig.2 VOH(DC )=2.4,IOH=-4m A VOL(DC )=0.4,IOL=4mA P. 6 Preliminary T4312816A Unit Output ZO=50 ohm (Fig.2)AC Output Load Circuit Publication Date: APR. 2003 Revision: 0.B Vtt=1.4v 50 ohm 30pf ...

Page 7

... In case of row precharge interrupt, auto precharge and read burst stop. The earliest a precharge command can be issued after a Read command without the loss of data BL-2 clocks. TM Technology Inc. reserves the right to change products or specifications without notice. Preliminary T4312816A Speed Version Symbol -6 -7 ...

Page 8

... If clock rising time is longer than 1ns,(tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf)=1ns & longer than 1ns,transient time compensation should be considered, i.e.,[(tr+tf)/2-1]ns should be added to the parameter. TM Technology Inc. reserves the right to change products or specifications without notice. Preliminary T4312816A -6 -7 Symbol Min Max ...

Page 9

... CAS Frequency Latency 100MHz(10.0ns) 2 83MHz(12.0ns) 2 75MHz(13.0ns) 2 66MHz(15.0ns) 2 60MHz(16.7ns Note : 1. 16.7ns is recommended for T4312816A RDL 2. Clock count formula : clock TM Technology Inc. reserves the right to change products or specifications without notice RAS RP RRD 60ns 42ns 15ns ...

Page 10

... Use in future Vender Specific Mode Register Set Burst length Wrap type Latency mode P.10 Preliminary T4312816A v = Valid x = Don’t care Bit2-0 WT=0 WT=1 000 1 1 001 2 2 010 4 4 011 8 8 100 R R 101 R R 110 ...

Page 11

... Issue precharge commands for all banks of the devices. 4. Issue 2 or more auto-refresh commands. 5. Issue mode register set command to initalize the mode register. Cf.) Sequence of 4 & regardless of the order. TM Technology Inc. reserves the right to change products or specifications without notice. Preliminary T4312816A Sequential Addressing Sequence (decimal) 0,1 1,0 Sequential Addressing ...

Page 12

... (V=Valid , X=Don’t Care , H=Logic High , L=logic Low BA0~BA1 : Program keys.(@MRS after the end of burst. RP P.12 Preliminary T4312816A BA / 0,1 A11 Row Address ...

Page 13

... Bs Bs *Note3 *Note3 SRC SLZ Read W rite P.13 Preliminary T4312816A *Note2. *Note4 *Note2 *Note3 *Note4 Rb Qc Read Row Active Precharge Publication Date: APR. 2003 18 19 :Don't care ...

Page 14

... X TMemory Technology Inc. reserves the right to change products or specifications without notice. Active & Read/Write Bank A Bnak B Bank C Bnak D Operation precharge 0 Bank A 0 Bank B 1 Bank C 1 Bank D X All Bamks P.14 Preliminary T4312816A /AP in read/wirte command. 10 Publication Date: APR. 2003 Revision: 0.B ...

Page 15

... P.15 Preliminary T4312816A ...

Page 16

... +CAS latency-1)+ CC RCD P.16 Preliminary T4312816A ...

Page 17

... RDL P.17 Preliminary T4312816A ...

Page 18

... P.18 Preliminary T4312816A ...

Page 19

... P.19 Preliminary T4312816A ...

Page 20

... P.20 Preliminary T4312816A ...

Page 21

... before internal precharge start. RAS P.21 Preliminary T4312816A ...

Page 22

... P.22 Preliminary T4312816A ...

Page 23

... P.23 Preliminary T4312816A ...

Page 24

... RDL P.24 Preliminary T4312816A Publication Date: APR ...

Page 25

... ‘High’ at MRS (Mode Register Set). 9 P.25 Preliminary T4312816A ...

Page 26

... tiv try prior to Row active command. SS P.26 Preliminary T4312816A ...

Page 27

... P.27 Preliminary T4312816A ...

Page 28

... Minimum 2 clock cycles should be met before new RAS activation. 3. Please refer to Mode Register Set table. TM Technology Inc. reserves the right to change products or specifications without notice. Auto Refresh Cycle i fre sh P.28 Preliminary T4312816A ...

Page 29

... Dimension in inch Max Min Nom Max 1 0.047 0.6 0.016 0.020 0.024 - 0.006 0.40 0.009 0.012 0.016 - 0.0315 0.15 0.002 0.004 0.006 22.62 0.871 0.875 0.905 11.96 0.455 0.463 0.471 10.26 0.396 0.400 0.404 P.29 Preliminary T4312816A Publication Date: APR. 2003 Revision: 0.B ...

Related keywords