BTB1197N3 Cystech Electonics Corp, BTB1197N3 Datasheet

Page 1

... Low Saturation PNP Epitaxial Planar Transistor BTB1197N3 Description The BTB1197N3 is designed with high current gain and low saturation voltage with collector current continuous. Features Low ≤ -0.3V (I CE(SAT) CE(SAT) Large collector current, I =-1A C Complementary to BTD1781N3 Pb-free package Symbol BTB1197N3 B：Base C： ...

Page 2

... CBO I - EBO * CE(sat CE(sat CE(sat BE(sat BE(on 180 100 100 T Cob - BTB1197N3 CYStech Electronics Corp. (Ta=25 C) Symbol V CBO V CEO V EBO θJA Tj Tstg Typ. Max. Unit - - -100 nA - -100 nA - -0. -0. -0.65 ...

Page 3

... Collector Current---IC(mA) Power Derating Curves 500 See Note 2 on page 1 400 See Note 1 on page 1 300 200 100 100 Ambient Temperature---TA(℃) BTB1197N3 CYStech Electronics Corp. 10000 VCE = 2V 1000 1000 10000 1000 1000 10000 150 200 www.DataSheet4U.com Spec. No. : C314N3 Issued Date : 2005.04.20 Revised Date : Page No ...

Page 4

... Reel Dimension Carrier Tape Dimension BTB1197N3 CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C314N3 Issued Date : 2005.04.20 Revised Date : Page No CYStek Product Specification ...

Page 5

... All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1197N3 CYStech Electronics Corp ...