BTB1205I3 Cystech Electonics Corp, BTB1205I3 Datasheet

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BTB1205I3

Manufacturer Part Number
BTB1205I3
Description
Low Vcesat PNP Epitaxial Planar Transistor
Manufacturer
Cystech Electonics Corp
Datasheet
Low Vcesat PNP Epitaxial Planar Transistor
BTB1205I3
Features
• Low V
• Excellent DC current gain characteristics
• Fast switching speed
• Large current capacity
• RoHS compliant package
Applications
• Strobe, voltage regulators, relay drivers, lamp drivers
Symbol
BTB1205I3
CE(sat)
BTB1805I3
B:Base
C:Collector
E:Emitter
, V
CE(sat)
=-0.38 V (typical), at I
CYStech Electronics Corp.
C
/ I
B
= -3A / -60mA
Outline
BV
I
R
C
TO-251
B C E
CESAT
CEO
CYStek Product Specification
-20V
-5A
127mΩ typ.
www.DataSheet4U.com
Spec. No. : C815I3
Issued Date : 2005.03.29
Revised Date : 2009.02.04
Page No. : 1/ 6

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BTB1205I3 Summary of contents

Page 1

... Fast switching speed • Large current capacity • RoHS compliant package Applications • Strobe, voltage regulators, relay drivers, lamp drivers Symbol BTB1805I3 B:Base C:Collector E:Emitter BTB1205I3 CYStech Electronics Corp -3A / -60mA C B Outline www.DataSheet4U.com Spec. No. : C815I3 Issued Date : 2005.03.29 Revised Date : 2009.02.04 Page No ...

Page 2

... Min. BV -25 CBO BV -20 CEO BV -5 EBO I - CBO I - EBO *V - CE(sat BE(sat) *h 190 Cob - Ordering Information Device BTB1205I3 (RoHS compliant) BTB1205I3 CYStech Electronics Corp. (Ta=25°C) Symbol V CBO V CEO V EBO Tstg Typ. Max. Unit - - -0.5 μA - -0.5 μ ...

Page 3

... Saturation Voltage vs Collector Current 10000 VBESAT@IC=10IB 1000 100 1 10 100 Collector Current---IC(mA) Output Characteristics 4 3.5 3 2.5 2 1 Collector-to-Emitter Voltage---VCE(V) BTB1205I3 CYStech Electronics Corp. 10000 VCE=2V 1000 100 VCE=1V 10 1000 10000 1000 10000 12 IB=20mA 10 IB=10mA IB=6mA IB=4mA IB=2mA IB www.DataSheet4U.com Spec ...

Page 4

... Characteristic Curves(Cont.) On Voltage vs Collector Current 10000 VBEON@VCE=2V 1000 100 1 10 100 Collector Current---IC(mA) BTB1205I3 CYStech Electronics Corp. 1000 10000 www.DataSheet4U.com Spec. No. : C815I3 Issued Date : 2005.03.29 Revised Date : 2009.02.04 Page No CYStek Product Specification ...

Page 5

... Time ( Peak Temperature Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature BTB1205I3 CYStech Electronics Corp. Peak Temperature 260 +0/-5 °C Sn-Pb eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds 240 +0/-5 ° ...

Page 6

... CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1205I3 CYStech Electronics Corp. B ...

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