BTB1580J3 Cystech Electonics Corp, BTB1580J3 Datasheet

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BTB1580J3

Manufacturer Part Number
BTB1580J3
Description
PNP Epitaxial Planar Transistor
Manufacturer
Cystech Electonics Corp
Datasheet
PNP Epitaxial Planar Transistor
BTB1580J3
Description
The BTB1580J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low
speed switching application. Pb-free package process is adopted.
Equivalent Circuit
Absolute Maximum Ratings
BTB1580J3
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation(T
Power Dissipation(T
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : Single Pulse Pw ≦ 300μs, Duty ≦ 2%.
B
≒6K
8k
B:Base
C:Collector
E:Emitter
BTB1580J3
Parameter
A
C
60
=25℃)
=25℃)
E
CYStech Electronics Corp.
C
(Ta=25°C)
Outline
Symbol
V
V
V
R
Tstg
R
I
Pd
Tj
I
CBO
CEO
EBO
CP
θJA
θJC
C
B
BV
I
R
C
TO-252
CESAT
C
CEO
E
-55~+150
Limits
-120
-120
83.3
6.25
150
1.5
20
-5
-4
-6
CYStek Product Specification
www.DataSheet4U.com
Spec. No. : C655J3
Issued Date : 2008.07.25
Revised Date :2009.02.04
Page No. : 1/6
-120V
-4A
600mΩ
°C/W
°C/W
Unit
°C
°C
W
W
V
V
V
A
A

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BTB1580J3 Summary of contents

Page 1

... PNP Epitaxial Planar Transistor BTB1580J3 Description The BTB1580J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Pb-free package process is adopted. Equivalent Circuit BTB1580J3 B ≒6K 8k ≒ 60 ≒ E B:Base C:Collector E:Emitter Absolute Maximum Ratings Parameter ...

Page 2

... CEO BV -120 CBO I - CBO I - CEO I - EBO *V - CE(sat) *V BE(on 1000 500 FE Cob - Ordering Information Device Package TO-252 BTB1580J3 (Pb-free) Recommended soldering footprint BTB1580J3 CYStech Electronics Corp. Typ. Max. Unit - - -2 200 pF Shipping 2500 pcs / Tape & Reel Spec ...

Page 3

... BE (SAT 1000 100 1 10 100 Collector Current---I Power Derating Curve 1.6 1.4 1.2 1 0.8 0.6 0.4 0 100 Ambient Temperature---T BTB1580J3 CYStech Electronics Corp. 10000 1000 100 1000 10000 (mA) C 10000 1000 100 1000 10000 (mA) C 150 200 (℃) A Spec. No. : C655J3 www.DataSheet4U.com Issued Date : 2008.07.25 Revised Date :2009 ...

Page 4

... Reel Dimension Carrier Tape Dimension BTB1580J3 CYStech Electronics Corp. Spec. No. : C655J3 www.DataSheet4U.com Issued Date : 2008.07.25 Revised Date :2009.02.04 Page No. : 4/6 CYStek Product Specification ...

Page 5

... P Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Note : All temperatures refer to topside of the package, measured on the package body surface. BTB1580J3 CYStech Electronics Corp. Peak Temperature 260 +0/-5 °C Sn-Pb eutectic Assembly 3°C/second max. 100°C 150° ...

Page 6

... CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1580J3 CYStech Electronics Corp. C ...

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