BTB1216J3 Cystech Electonics Corp, BTB1216J3 Datasheet

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BTB1216J3

Manufacturer Part Number
BTB1216J3
Description
PNP Epitaxial Planar High Current (High Performance) Transistor
Manufacturer
Cystech Electonics Corp
Datasheet
PNP Epitaxial Planar High Current (High Performance) Transistor
BTB1216J3
Features
• 4 Amps continuous current, up to 10 Amps peak current
• Very low saturation voltage
• Excellent gain characteristics specified up to 3 Amps
• Extremely low equivalent on resistance, R
• RoHS compliant package
Symbol
Absolute Maximum Ratings
BTB1216J3
Note: 1.Single pulse, Pw≤10ms
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Power Dissipation @T
Power Dissipation @T
Operating and Storage Temperature Range
B:Base
C:Collector
E:Emitter
BTB1216J3
Parameter
A
C
=25°C
=25°C
CYStech Electronics Corp.
(Ta=25°C)
CE(SAT)
=90m Ω at 3A
Tj ; Tstg
Symbol
V
V
V
I
Pd
I
I
CBO
CEO
EBO
CP
C
B
Outline
B
BV
I
R
C
TO-252
CE(SAT)
CEO
C
-55 ~ +150
Limits
-180
-140
-10
20
-6
-4
-1
1
CYStek Product Specification
Spec. No. : C811J3
Issued Date : 2008.12.10
Revised Date : 2009.02.04
Page No. : 1/7
E
www.DataSheet4U.com
(Note 1)
-140V
-4A
90mΩ typ.
Unit
°C
W
V
V
V
A
A
A

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BTB1216J3 Summary of contents

Page 1

... Emitter-Base Voltage Continuous Collector Current Peak Collector Current Base Current Power Dissipation @T =25°C A Power Dissipation @T =25°C C Operating and Storage Temperature Range Note: 1.Single pulse, Pw≤10ms BTB1216J3 CYStech Electronics Corp. =90m Ω CE(SAT) Outline (Ta=25°C) Symbol V CBO V CEO V EBO ...

Page 2

... 150 Cob - Classification Rank R Range 150~300 Ordering Information Device Package TO-252 BTB1216J3 (RoHS com pliant) BTB1216J3 CYStech Electronics Corp. Max. Unit - - -10 nA -40 -60 mV -70 -120 mV -150 mV -370 mV -1110 mV -950 mV 200 ...

Page 3

... Recommended soldering footprint BTB1216J3 CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C811J3 Issued Date : 2008.12.10 Revised Date : 2009.02.04 Page No. : 3/7 CYStek Product Specification ...

Page 4

... Collector Current---IC(mA) Power Derating Curve 1.2 1 0.8 0.6 0.4 0 100 Ambient Temperature---TA(℃) BTB1216J3 CYStech Electronics Corp. 10000 1000 100 VCE=1V 1000 10000 10000 1000 100 1000 10000 150 200 www.DataSheet4U.com Spec. No. : C811J3 Issued Date : 2008.12.10 Revised Date : 2009.02.04 Page No ...

Page 5

... Reel Dimension Carrier Tape Dimension BTB1216J3 CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C811J3 Issued Date : 2008.12.10 Revised Date : 2009.02.04 Page No. : 5/7 CYStek Product Specification ...

Page 6

... P Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Note : All temperatures refer to topside of the package, measured on the package body surface. BTB1216J3 CYStech Electronics Corp. Peak Temperature 260 +0/-5 °C Sn-Pb eutectic Assembly 3°C/second max. 100°C 150° ...

Page 7

... CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1216J3 CYStech Electronics Corp. C ...

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