2SK2980 Hitachi Semiconductor, 2SK2980 Datasheet - Page 2

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2SK2980

Manufacturer Part Number
2SK2980
Description
Silicon N Channel MOS FET High Speed Power Switching
Manufacturer
Hitachi Semiconductor
Datasheet

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2SK2980
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Note:
2
1. PW
2. Value at when using alumina ceramic board (12.5 x 20 x 0.7 mm)
10 s, duty cycle
1 %
Symbol
V
V
I
I
Pch
Tch
Tstg
D
D(pulse)
DSS
GSS
Note2
Note1
Ratings
30
+12
–10
1.0
4
0.8
150
–55 to +150
Unit
V
V
V
A
A
W
C
C

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