2SK2980 Hitachi Semiconductor, 2SK2980 Datasheet - Page 3

• Manufacturer Part Number: 2SK2980
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

Electrical Characteristics (Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Zero gate voltege drain
current
Gate to source leak current
Gate to source cutoff voltage V
Static drain to source on state
resistance
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance Crss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Note:
3. Pulse test
4. Marking is “ZZ– ”
Symbol
V
V
I
I
R
R
|y
Ciss
Coss
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
(BR)GSS
GS(off)
DS(on)
DS(on)
fs
|
Min
30
+12
–10
—
—
0.5
—
—
1.2
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
0.2
0.3
2.0
155
75
35
12
30
35
30
Max
—
—
—
1.0
1.5
0.28
0.5
—
—
—
—
—
—
—
—
5.0
Unit
V
V
V
V
S
pF
pF
pF
ns
ns
ns
ns
A
A
Test Conditions
I
I
I
V
V
I
I
V
I
V
I
V
V
V
f = 1MHz
V
R
D
G
G
D
D
D
D
DS
GS
GS
GS
DS
DS
GS
GS
L
= 100 A, V
= +100 A, V
= –100 A, V
= 10 A, V
= 500 mA
= 500 mA
= 500 mA
= 20
= 30 V, V
= 10V
= 10V
= 8V, V
= 4V
= 2.5V
= 0
= 4V, I
Note3
Note3
D
Note3
2SK2980
= 500 mA
DS
DS
GS
GS
= 5V
DS
= 0
DS
= 0
= 0
= 0
= 0
3