2SK2980 Hitachi Semiconductor, 2SK2980 Datasheet - Page 5

• Manufacturer Part Number: 2SK2980
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

0.5
0.4
0.3
0.2
0.1
–40
0.5
0.4
0.3
0.2
0.1
0
Static Drain to Source on State Resistance
0
Drain to Source Saturation Voltage vs.
V
Gate to Source Voltage
GS
Case Temperature
2
0
= 2.5 V
Gate to Source Voltage
4 V
vs. Temperature
I
40
D
4
= 0.1 A, 0.2 A, 0.5 A
0.1 A, 0.2 A, 0.5 A
80
6
I
Tc
Pulse Test
D
Pulse Test
V
0.5 A
= 1 A
0.2 A
120
GS
8
(°C)
(V)
160
10
0.05
0.05
0.5
0.2
0.1
0.5
0.2
0.1
0.01 0.02
Static Drain to Source on State Resistance
2
1
5
2
1
0.1
Forward Transfer Admittance vs.
0.2
Drain Current I
Drain Current
vs. Drain Current
0.05 0.1
V
Drain Current
GS
Tc = –25 °C
0.5
= 2.5 V
75 °C
4 V
1
0.2
V
Pulse Test
I
D
D
DS
Pulse Test
(A)
25 °C
(A)
2
= 10 V
0.5
2SK2980
5
1
5