2SK2980 Hitachi Semiconductor, 2SK2980 Datasheet - Page 6

• Manufacturer Part Number: 2SK2980
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

2SK2980
6
1000
500
200
100
200
100
50
20
10
50
20
10
5
5
2
1
0.1
0
Drain to Source Voltage V
0.2
t f
t
10
d(off)
Switching Characteristics
Typical Capacitance vs.
Drain to Source Voltage
Drain Current
0.5
t
V
PW = 2 µs, duty < 1 %
d(on)
20
GS
Coss
Crss
= 4 V, V
Ciss
1
r t
30
I
2
D
DD
V
f = 1 MHz
(A)
GS
40
= 10 V
DS
5
= 0
(V)
50
10
50
40
30
20
10
1.0
0.8
0.6
0.4
0.2
0
0
V
DS
Source to Drain Voltage
Dynamic Input Characteristics
5 V
2
0.4
Reverse Drain Current vs.
Gate Charge
Source to Drain Voltage
V
V
DD
GS
= 20 V
4
0.8
V
10 V
5 V
DD
V
= 5 V
GS
10 V
20 V
6
1.2
Qg (nc)
= 0
Pulse Test
I
V
D
8
1.6
SD
= 1 A
(V)
10
2.0
20
16
12
8
4
0