2SK3130 Toshiba Semiconductor, 2SK3130 Datasheet - Page 3

• Manufacturer Part Number: 2SK3130
• Description: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)
• Manufacturer: Toshiba Semiconductor

100
0.1
10
10
5
4
3
2
1
0
8
6
4
2
0
1
0.1
0
0
Common source
V DS = 20 V
Pulse test
Common source
Tc = 25°C
Pulse test
Common source
V DS = 20 V
Pulse test
Drain-source voltage V DS (V)
Gate-source voltage V GS (V)
2
2
Drain current I
Tc = 25°C
1
4
4
I
I
|Y
D
D
100
fs
– V
– V
| – I
15
100
DS
GS
D
Tc = 25°C
6
6
D
10
10
(A)
V GS = 5.0 V
8
8
6
5.8
5.6
5.4
5.2
100
10
10
3
100
10
20
16
12
10
8
6
4
2
0
8
4
0
1
0.1
0
0
Common source
Tc = 25°C
Pulse test
15
10
Drain-source voltage V DS (V)
Gate-source voltage V GS (V)
4
V GS = 10, 15 V
10
Drain current I
R
6.4
20
V
DS (ON)
8
I
DS
D
– V
– V
1
6.2
DS
GS
– I
30
12
D
6.0
D
Common source
Tc = 25°C
Pulse test
(A)
Common source
Tc = 25°C
Pulse test
5.8
V GS = 5.0 V
40
16
5.4
I D = 6 A
1.5
3
2004-07-06
2SK3130
50
20
10