2SK3130 Toshiba Semiconductor, 2SK3130 Datasheet - Page 5

• Manufacturer Part Number: 2SK3130
• Description: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)
• Manufacturer: Toshiba Semiconductor

0.01
100
0.1
10
1
1
* Single nonrepetitive pulse
Curves must be derated
linearly with increase in
temperature.
I D max (pulsed) *
I D max (continuous)
DC operation Tc = 25°C
Tc = 25°C
Drain-source voltage V DS (V)
0.001
0.01
0.1
10
Safe operating area
10 µ
1
10
0.01
Duty = 0.5
0.05
0.02
0.2
0.1
1 ms *
100 µ
100
Single pulse
V DSS max
100 µs *
1 m
1000
Pulse width t w (s)
r
th
0.01
− t
5
w
R
V
DD
G
= 25 Ω
−15 V
= 90 V, L = 16.8 mH
500
400
300
200
100
15 V
0
25
0.1
Test circuit
P DM
Channel temperature (initial) T ch (°C)
Duty = t/T
R th (ch-c) = 3.125°C/W
50
t
T
1
75
E
AS
E
V
AS
DD
− T
=
B
Wave form
ch
100
1
2
VDSS
I
⋅
AR
10
L
⋅
2 I
⋅
⎛
⎜ ⎜
⎝
B
VDSS
125
V
B
VDSS
DS
2004-07-06
−
2SK3130
V
DD
150
⎞
⎟ ⎟
⎠