2SK3130 Toshiba Semiconductor, 2SK3130 Datasheet - Page 4

• Manufacturer Part Number: 2SK3130
• Description: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)
• Manufacturer: Toshiba Semiconductor

3000
1000
500
300
100
50
30
10
50
40
30
20
10
0
5
4
3
2
1
0
0.1
0
0
Common source
V GS = 0 V
f = 1 MHz
Tc = 25°C
Common source
V GS = 10 V
Pulse test
0.3 0.5
Drain-source voltage V DS (V)
40
Case temperature Tc (°C)
Case temperature Tc (°C)
40
Capacitance – V
1
R
80
DS (ON)
P
D
80
3
– Tc
5
– Tc
120
10
DS
120
160
30 50
I D = 6 A
C iss
C oss
C rss
1.5
3
100
200
160
4
500
400
300
200
100
0.1
10
−80
1
5
4
3
2
1
0
0
0
0
Common source
Tc = 25°C
Pulse test
10
Dynamic input/output characteristics
−0.2
−40
V DS
Drain-source voltage V DS (V)
10
5
Case temperature Tc (°C)
Total gate charge Q
−0.4
3
0
V GS
20
I
DR
V
V DD = 100 V
th
−0.6
– V
40
– Tc
V GS = 0, −1 V
DS
30
−0.8
g
80
Common source
I D = 6 A
Tc = 25°C
Pulse test
Common source
V DS = 10 V
I D = 1 mA
Pulse test
(nC)
400
40
−1.0
200
120
2004-07-06
2SK3130
−1.2
160
50
20
16
12
8
4
0