2SK3669 Toshiba Semiconductor, 2SK3669 Datasheet - Page 2

• Manufacturer Part Number: 2SK3669
• Description: Silicon N-Channel MOS Type Switching Regulator
• Manufacturer: Toshiba Semiconductor

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Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Marking
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“Miller”) charge
Continuous drain reverse current
Pulse drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Characteristic
Characteristic
K3669
Rise time
Turn-on time
Fall time
Turn-off time
(t
(t
w
w
≤ 10 ms) (Note 1)
≤ 1 ms) (Note 1)
(Note 1)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Ta = 25°C)
V
R
Symbol
Symbol
(BR) DSS
V
DS (ON)
I
I
C
I
I
|Y
C
C
Q
Q
GSS
DSS
I
DRP
DRP
DS2F
V
t
t
Q
Q
DR
t
oss
on
off
rss
t
t
iss
rr
gs
gd
th
fs
r
f
rr
g
|
V
V
I
V
V
V
V
V
Duty ≤ 1%, t
V
I
I
I
dI
D
D
DR1
DR
GS
DS
DS
GS
DS
DS
GS
DD
DR
= 10 mA, V
= 10 A
10 V
2
0 V
= 10 A, V
= 100 V, V
= 10 V, I
= 10 V, I
= 10 V, V
/dt = 50 A/μs
= ±16 V, V
= 10 V, I
≈ 80 V, V
= 10 A, V
Test Condition
Test Condition
w
D
D
GS
D
GS
GS
GS
= 10 μs
(Ta = 25°C)
GS
= 1 mA
= 5 A
DS
GS
= 5 A
⎯
⎯
⎯
= 0 V,
= 0 V
= 0 V, f = 1 MHz
= 10 V,
= 0 V
= 0 V
= 0 V
I
D
V
DD
= 10 A
≈ 50 V
V
OUT
Min
100
Min
3.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
3
Typ.
Typ.
480
220
8.0
5.6
2.4
95
12
12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
65
90
6
9
2
2
2006-11-20
±100
2SK3669
Max
Max
−1.7
100
125
5.0
10
15
28
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
nA
μA
nC
nC
pF
ns
ns
V
V
S
A
A
A
V